| Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films Q Luo, H Ma, H Su, KH Xue, R Cao, Z Gao, J Yu, T Gong, X Xu, J Yin, ... IEEE Electron Device Letters 40 (4), 570-573, 2019 | 39 | 2019 |
| 24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference J Yang, X Xue, X Xu, Q Wang, H Jiang, J Yu, D Dong, F Zhang, H Lv, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 336-338, 2021 | 32 | 2021 |
| Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability Q Luo, J Yu, X Zhang, KH Xue, JH Yuan, Y Cheng, T Gong, H Lv, X Xu, ... 2019 Symposium on VLSI Technology, T236-T237, 2019 | 29 | 2019 |
| Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System Q Luo, X Zhang, J Yu, W Wang, T Gong, X Xu, J Yin, P Yuan, L Tai, ... IEEE Electron Device Letters 40 (5), 718-721, 2019 | 27 | 2019 |
| Energy efficient and robust reservoir computing system using ultrathin (3.5 nm) ferroelectric tunneling junctions for temporal data learning J Yu, Y Li, W Sun, W Zhang, Z Gao, D Dong, Z Yu, Y Zhao, J Lai, Q Ding, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 17 | 2021 |
| First demonstration of OxRRAM integration on 14nm FinFet platform and scaling potential analysis towards sub-10nm node X Xu, J Yu, T Gong, J Yang, J Yin, Q Luo, J Liu, Z Yu, Q Liu, H Lv, M Liu 2020 IEEE International Electron Devices Meeting (IEDM), 24.3. 1-24.3. 4, 2020 | 15 | 2020 |
| Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure J Yu, X Xu, T Gong, Q Luo, D Dong, P Yuan, L Tai, J Yin, X Zhu, X Wu, ... Nanoscale Research Letters 14, 1-6, 2019 | 14 | 2019 |
| Classification of three-level random telegraph noise and its application in accurate extraction of trap profiles in oxide-based resistive switching memory T Gong, Q Luo, X Xu, J Yu, D Dong, H Lv, P Yuan, C Chen, J Yin, L Tai, ... IEEE Electron Device Letters 39 (9), 1302-1305, 2018 | 12 | 2018 |
| Performance improvement of memristor-based echo state networks by optimized programming scheme J Yu, W Sun, J Lai, X Zheng, D Dong, Q Luo, H Lv, X Xu IEEE Electron Device Letters 43 (6), 866-869, 2022 | 11 | 2022 |
| Unveiling the Switching Mechanism of a TaOx/HfO2Self-Selective Cell by Probing the Trap Profiles With RTN Measurements T Gong, Q Luo, H Lv, X Xu, J Yu, P Yuan, D Dong, C Chen, J Yin, L Tai, ... IEEE Electron Device Letters 39 (8), 1152-1155, 2018 | 9 | 2018 |
| 3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing W Sun, W Zhang, J Yu, Y Li, Z Guo, J Lai, D Dong, X Zheng, F Wang, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 8 | 2022 |
| Switching and failure mechanism of self-selective cell in 3D VRRAM by RTN-based defect tracking technique T Gong, Q Luo, H Lv, X Xu, J Yu, P Yuan, D Dong, C Chen, J Yin, L Tai, ... 2018 IEEE International Memory Workshop (IMW), 1-4, 2018 | 7 | 2018 |
| Long-term accuracy enhancement of binary neural networks based on optimized three-dimensional memristor array J Yu, W Zhang, D Dong, W Sun, J Lai, X Zheng, T Gong, Y Li, D Shang, ... Micromachines 13 (2), 308, 2022 | 2 | 2022 |
| Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method J Yu, X Xu, T Gong, Q Luo, L Tai, X Li, P Yuan, D Dong, J Yin, Q Ding, ... 2019 IEEE International Conference on Electron Devices and Solid-State …, 2019 | 1 | 2019 |
| A CMOS Compatible, Forming Free TaON-based ReRAM with Low Soft Errors and Good Retention!! L Tai, X Xu, P Yuan, J Yu, Q Luo, H Lv, M Liu 2018 IEEE International Conference on Integrated Circuits, Technologies and …, 2018 | | 2018 |
Hangbing LvInstitute of Microelectronics, Chinese Academy of SciencesVerified email at ime.ac.cn
