| ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application CH Huang, JS Huang, SM Lin, WY Chang, JH He, YL Chueh Acs Nano 6 (9), 8407-8414, 2012 | 154 | 2012 |
| Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate CH Huang, JS Huang, CC Lai, HW Huang, SJ Lin, YL Chueh ACS applied materials & interfaces 5 (13), 6017-6023, 2013 | 149 | 2013 |
| Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior KD Liang, CH Huang, CC Lai, JS Huang, HW Tsai, YC Wang, YC Shih, ... ACS applied materials & interfaces 6 (19), 16537-16544, 2014 | 142 | 2014 |
| Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays CH Huang, TS Chou, JS Huang, SM Lin, YL Chueh Scientific Reports 7 (1), 2066, 2017 | 53 | 2017 |
| Resistive switching of Sn-doped In 2 O 3/HfO 2 core–shell nanowire: geometry architecture engineering for nonvolatile memory CH Huang, WC Chang, JS Huang, SM Lin, YL Chueh Nanoscale 9 (20), 6920-6928, 2017 | 32 | 2017 |
| Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: Manipulated bias control from selector to memristor JS Huang, WC Yen, SM Lin, CY Lee, J Wu, ZM Wang, TS Chin, YL Chueh Journal of Materials Chemistry C 2 (22), 4401-4405, 2014 | 25 | 2014 |
| Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with … SM Lin, JS Huang, WC Chang, TC Hou, HW Huang, CH Huang, SJ Lin, ... ACS applied materials & interfaces 5 (16), 7831-7837, 2013 | 23 | 2013 |
| Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory TY Su, CH Huang, YC Shih, TH Wang, H Medina, JS Huang, HS Tsai, ... Journal of Materials Chemistry C 5 (25), 6319-6327, 2017 | 21 | 2017 |
| Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering SM Lin, JY Tseng, TY Su, YC Shih, JS Huang, CH Huang, SJ Lin, ... ACS Applied Materials & Interfaces 6 (20), 17686-17693, 2014 | 21 | 2014 |
| Direct Synthesis of Graphene with Tunable Work Function on Insulators via In Situ Boron Doping by Nickel-Assisted Growth WC Yen, H Medina, JS Huang, CC Lai, YC Shih, SM Lin, JG Li, ZM Wang, ... The Journal of Physical Chemistry C 118 (43), 25089-25096, 2014 | 18 | 2014 |
| Ultra-fast synthesis of graphene and highly oriented graphite by rapid microwave heating process WC Yen, HC Lin, JS Huang, YJ Huang, YL Chueh Science of Advanced Materials 6 (1), 1-8, 2014 | 13 | 2014 |
| Forming-free bipolar memristive switching of ZnO films deposited by cyclic-voltammetry JS Huang, CY Lee, TS Chin Electrochimica Acta 91, 62-68, 2013 | 13 | 2013 |
| Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer JS Huang, YC Lin, HW Tsai, WC Yen, CW Chen, CY Lee, TS Chin, ... Advanced Electronic Materials 8 (1), 2015 | 12 | 2015 |
| Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor YC Shih, TH Wang, JS Huang, CC Lai, YJ Hong, YL Chueh RSC advances 6 (66), 61221-61227, 2016 | 11 | 2016 |
| Glancing angle deposition of large-scale helical Si@ Cu 3 Si nanorod arrays for high-performance anodes in rechargeable Li-ion batteries HC Wang, CM Hsu, B Gu, CC Chung, SC Wu, PR Ilango, JS Huang, ... Nanoscale 13 (44), 18626-18631, 2021 | 7 | 2021 |
| Nonpolar electrical switching behavior in Cu–Si(Cu)Ox–Pt stacks TSC Jian-Shiou Huang, Li-Ming Chen, Ting-Yi Lin, Chi Thin Solid Films 544, 134–138, 2013 | 7 | 2013 |
| Improved performance of ZnO-based resistive memory by internal diffusion of Ag atoms CN Peng, CW Wang, JS Huang, WY Chang, WW Wu, YL Chueh Journal of Nanoscience and Nanotechnology 12 (8), 6271-6275, 2012 | 6 | 2012 |
| Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications MH Lee, JD Luo, CC Cheng, JS Huang, YL Chueh, CW Chen, TY Wu, ... Japanese Journal of Applied Physics 53 (8S1), 08LE03, 2014 | 1 | 2014 |
| Positive and negative electrode material and preparation method thereof YEN Wen-Chun, WH Huang, WK Liao, JS Huang US Patent App. 16/930,275, 2021 | | 2021 |
| Lithium ion battery silicon carbon electrode material and preparation method thereof MT Tsai, JS Huang, CW Hsu, YEN Wen-Chun US Patent App. 16/930,283, 2021 | | 2021 |
Wen-Chun Yen (顏文群)National Tsing Hua University (國立清華大學)Verified email at m98.nthu.edu.tw
Wen-Chun Yen (顏文群)National Tsing Hua University (國立清華大學)Verified email at m98.nthu.edu.tw