| A 40-Gb/s optical transceiver front-end in 45 nm SOI CMOS J Kim, JF Buckwalter IEEE Journal of Solid-State Circuits 47 (3), 615-626, 2012 | 131 | 2012 |
| Bandwidth enhancement with low group-delay variation for a 40-Gb/s transimpedance amplifier J Kim, JF Buckwalter IEEE Transactions on Circuits and Systems I: Regular Papers 57 (8), 1964-1972, 2010 | 131 | 2010 |
| A Q-band amplifier implemented with stacked 45-nm CMOS FETs S Pornpromlikit, HT Dabag, B Hanafi, J Kim, LE Larson, JF Buckwalter, ... 2011 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2011 | 74 | 2011 |
| Staggered gain for 100+ GHz broadband amplifiers J Kim, JF Buckwalter IEEE Journal of Solid-State Circuits 46 (5), 1123-1136, 2011 | 60 | 2011 |
| A 92 GHz bandwidth distributed amplifier in a 45 nm SOI CMOS technology J Kim, JF Buckwalter IEEE Microwave and Wireless Components Letters 21 (6), 329-331, 2011 | 51 | 2011 |
| Q-Band and W-Band Power Amplifiers in 45-nm CMOS SOI J Kim, H Dabag, P Asbeck, JF Buckwalter Microwave Theory and Techniques, IEEE Transactions on 60 (6), 1870-1877, 2012 | 48 | 2012 |
| A Switchless,-Band Bidirectional Transceiver in 0.12-m SiGe BiCMOS Technology J Kim, JF Buckwalter Solid-State Circuits, IEEE Journal of, 1-1, 2012 | 36 | 2012 |
| A 45-GHz SiGe HBT amplifier at greater than 25% efficiency and 30 mW output power HT Dabag, J Kim, LE Larson, JF Buckwalter, PM Asbeck 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 25-28, 2011 | 27 | 2011 |
| Cascaded constructive wave amplification JF Buckwalter, J Kim IEEE Transactions on Microwave Theory and Techniques 58 (3), 506-517, 2010 | 25 | 2010 |
| A 26dB-gain 100GHz Si/SiGe cascaded constructive-wave amplifier JF Buckwalter, J Kim 2009 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2009 | 14 | 2009 |
| A 77-GHz to 90-GHz bidirectional amplifier for half-duplex front-ends J Kim, M Parlak, JF Buckwalter IEEE Custom Integrated Circuits Conference 2010, 1-4, 2010 | 11 | 2010 |
| A DC-102GHz broadband amplifier in 0.12 µm SiGe BiCMOS J Kim, JF Buckwalter 2009 IEEE Radio Frequency Integrated Circuits Symposium, 53-56, 2009 | 10 | 2009 |
| A 9 mW, Q-Band direct-conversion I/Q modulator in SiGe BiCMOS process AK Gupta, J Kim, P Asbeck, JF Buckwalter IEEE microwave and wireless components letters 22 (6), 327-329, 2012 | 7 | 2012 |
| A fully-integrated optical duobinary transceiver in a 130nm SOI CMOS technology JF Buckwalter, J Kim, X Zheng, G Li, K Raj, A Krishnamoorthy 2011 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2011 | 7 | 2011 |
| A fully integrated Q-band bidirectional transceiver in 0.12-µm SiGe BiCMOS technology J Kim, JF Buckwalter 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 57-60, 2010 | 7 | 2010 |
| A 1.1 THz Gain-Bandwidth W-Band Amplifier in a 0.12um Silicon Germanium BiCMOS Process J Kim, JF Buckwalter IEEE Microwave and Wireless Components Letters 20 (11), 625-627, 2010 | 3 | 2010 |
| RFIC design for high-speed optical and multigigabit wireless communication systems J Kim UC San Diego, 2011 | 1 | 2011 |
James BuckwalterUniversity of California - Santa BarbaraVahvistettu sähköpostiosoite verkkotunnuksessa ucsb.edu
