Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors M AzadáMalik
Journal of Materials Chemistry 4 (8), 1249-1253, 1994
112 1994 Optical, structural investigations and band-gap bowing parameter of GaInN alloys M Moret, B Gil, S Ruffenach, O Briot, C Giesen, M Heuken, S Rushworth, ...
Journal of Crystal Growth 311 (10), 2795-2797, 2009
81 2009 Liquid injection atomic layer deposition of silver nanoparticles PR Chalker, S Romani, PA Marshall, MJ Rosseinsky, S Rushworth, ...
Nanotechnology 21 (40), 405602, 2010
73 2010 Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, A Pirovano, ...
Chemistry of Materials 20 (11), 3557-3559, 2008
65 2008 Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium E Bourret-Courchesne, Q Ye, DW Peters, J Arnold, M Ahmed, SJC Irvine, ...
Journal of crystal growth 217 (1-2), 47-54, 2000
59 2000 Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing M Mattinen, PJ King, L Khriachtchev, MJ Heikkilä, B Fleming, ...
Materials today chemistry 9, 17-27, 2018
57 2018 Atomic layer deposition of Ru from CpRu (CO) 2Et using O2 gas and O2 plasma N Leick, ROF Verkuijlen, L Lamagna, E Langereis, S Rushworth, ...
Journal of Vacuum Science & Technology A 29 (2), 2011
57 2011 Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors G Krötz, W Legner, G Müller, HW Grueninger, L Snith, B Leese, A Jones, ...
Materials Science and Engineering: B 29 (1-3), 154-159, 1995
57 1995 Evaluation of copper organometallic sources for CuGaSe2 photovoltaic applications MC Artaud-Gillet, S Duchemin, R Odedra, G Orsal, N Rega, S Rushworth, ...
Journal of Crystal Growth 248, 163-168, 2003
55 2003 Growth of low carbon content AlxGa1− xAs by reduced pressure MOVPE using trimethylamine alane AC Jones, SA Rushworth
Journal of crystal growth 106 (2-3), 253-257, 1990
55 1990 Growth of low carbon content AlxGa1− xAs by reduced pressure MOVPE using trimethylamine alane AC Jones, SA Rushworth
Journal of crystal growth 106 (2-3), 253-257, 1990
55 1990 Vapor pressure of metal organic precursors M Fulem, K Růžička, V Růžička, E Hulicius, T Šimeček, K Melichar, ...
Journal of crystal growth 248, 99-107, 2003
51 2003 Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies C Dubourdieu, H Roussel, C Jiménez, M Audier, JP Sénateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
50 2005 Preparation of dense, ultra-thin MIEC ceramic membranes by atmospheric spray-pyrolysis technique A Abrutis, A Teiserskis, G Garcia, V Kubilius, Z Saltyte, Z Salciunas, ...
Journal of Membrane Science 240 (1-2), 113-122, 2004
46 2004 Addition of yttrium into films: Microstructure and electrical properties C Dubourdieu, E Rauwel, H Roussel, F Ducroquet, B Holländer, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009
44 2009 Vapour pressure measurement of low volatility precursors SA Rushworth, LM Smith, AJ Kingsley, R Odedra, R Nickson, P Hughes
Microelectronics Reliability 45 (5-6), 1000-1002, 2005
42 2005 The growth of CdS and CdSe alloys by MOCVD using a new dimethylcadmium adduct AC Jones, SA Rushworth, PJ Wright, B Cockayne, P O'Brien, JR Walsh
Journal of crystal growth 97 (3-4), 537-541, 1989
41 1989 Recent developments in metalorganic precursors for metalorganic chemical vapour deposition AC Jones, SA Rushworth, J Auld
Journal of crystal growth 146 (1-4), 503-510, 1995
40 1995 The deposition of aluminum nitride thin films by metal‐organic CVD—an alternative precursor system AC Jones, J Auld, SA Rushworth, EW Williams, PW Haycock, CC Tang, ...
Advanced Materials 6 (3), 229-231, 1994
38 1994 Deposition of aluminum nitride thin films by MOCVD from the trimethylaluminum–ammonia adduct AC Jones, SA Rushworth, DJ Houlton, JS Roberts, V Roberts, ...
Chemical Vapor Deposition 2 (1), 5-8, 1996
37 1996