Hongping Zhao
Title
Cited by
Cited by
Year
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu
Optics express 19 (104), A991-A1007, 2011
5662011
Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
RA Arif, YK Ee, N Tansu
Applied Physics Letters 91 (9), 091110, 2007
3112007
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
H Zhao, RA Arif, YK Ee, N Tansu
IEEE Journal of Quantum Electronics 45 (1), 66-78, 2008
2262008
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
H Zhao, G Liu, RA Arif, N Tansu
Solid-State Electronics 54 (10), 1119-1124, 2010
2252010
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
H Zhao, G Liu, N Tansu
Applied Physics Letters 97 (13), 131114, 2010
1902010
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
J Zhang, H Zhao, N Tansu
Applied Physics Letters 97 (11), 111105, 2010
1822010
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
H Zhao, G Liu, J Zhang, RA Arif, N Tansu
Journal of Display Technology 9 (4), 212-225, 2013
1762013
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ...
Applied Physics Letters 95 (6), 061104, 2009
1762009
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ...
Applied Physics Letters 95 (6), 061104, 2009
1762009
III-nitride photonics
N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee
IEEE Photonics Journal 2 (2), 241-248, 2010
1642010
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes
J Zhang, H Zhao, N Tansu
Applied physics letters 98 (17), 171111, 2011
1482011
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
S Rafique, L Han, MJ Tadjer, JA Freitas Jr, NA Mahadik, H Zhao
Applied Physics Letters 108 (18), 182105, 2016
1472016
Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes
RA Arif, H Zhao, YK Ee, N Tansu
IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008
1472008
Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses
YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1218-1225, 2009
1422009
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm
H Zhao, RA Arif, N Tansu
IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009
1382009
Optical gain characteristics of staggered InGaN quantum wells lasers
H Zhao, N Tansu
Journal of Applied Physics 107 (11), 113110, 2010
1282010
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 062101, 2018
1252018
Type-II InGaN-GaNAs quantum wells for lasers applications
RA Arif, H Zhao, N Tansu
Applied Physics Letters 92 (1), 011104, 2008
1242008
Self-consistent gain analysis of type-II ‘’ InGaN–GaNAs quantum well lasers
H Zhao, RA Arif, N Tansu
Journal of Applied Physics 104 (4), 043104, 2008
1152008
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
H Zhao, J Zhang, G Liu, N Tansu
Applied Physics Letters 98 (15), 151115, 2011
1102011
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