Digital performance assessment of the dual-material gate GaAs/InAs/Ge junctionless TFET M Vadizadeh
IEEE Transactions on Electron Devices 68 (4), 1986-1991, 2021
27 2021 Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies M Vadizadeh
Journal of Computational Electronics 17, 745-755, 2018
21 2018 Impact of channel doping engineering on the high-frequency noise performance of junctionless In0. 3Ga0. 7As/GaAs FET: a numerical simulation study M Fallahnejad, M Vadizadeh, A Salehi, A Kashaniniya, F Razaghian
Physica E: Low-dimensional Systems and Nanostructures 115, 113715, 2020
18 2020 Silicon on raised insulator field effect diode (SORI-FED) for alleviating scaling problem in FED M Vadizadeh, M Fathipour, G Darvish
International Journal of Modern Physics B 28 (05), 1450038, 2014
18 2014 Improving gate delay and I ON/I OFF in nanoscale heterostructure field effect diode (H-FED) by using heavy doped layers in the channel M Vadizadeh
Applied Physics A: Materials Science and Processing 122 (4), 469, 2016
17 2016 Designing a hetrostructure junctionless-field effect transistor (HJL-FET) for high-speed applications M Vadizadeh
Journal of the Korean Physical Society 71, 275-282, 2017
12 2017 Dual material gate nanowire field effect diode (DMG-NWFED): Operating principle and properties M Vadizadeh
Microelectronics Journal 71, 1-7, 2018
11 2018 Junctionless field effect diode (JL-FED): A first-principles study M Vadizadeh
ECS Journal of Solid State Science and Technology 8 (6), M60, 2019
10 2019 Performance enhancement of field effect transistor without doping junctions using In M Fallahnejad, M Vadizadeh, A Salehi
International Journal of Modern Physics B 33 (07), 1950050, 2019
10 2019 Design and Simulation Noise Characteristics of AlGaN/GaN HEMT on SIC Substrate for Low Noise Applications M Fallahnejad, A Kashaniniya, M Vadizadeh
Journal of Electric al and Electronics Engineering (IOSR - JEEE) 10 (3), 31 - 37, 2015
10 2015 Using low-k oxide for reduction of leakage current in double gate tunnel FET M Vadizadeh, M Fathipour
2009 10th International Conference on Ultimate Integration of Silicon, 301-304, 2009
8 2009 A novel nanoscale tunnel FET structure for increasing on/off current ratio M Vadizadeh, M Fathipour, A Amid
2008 International Conference on Microelectronics, 300-303, 2008
8 2008 Low-power ultradeep-submicrometer junctionless carbon nanotube field-effect diode SS Ghoreishi, M Vadizadeh, R Yousefi, A Afzalian
IEEE Transactions on Electron Devices 69 (1), 400-405, 2021
7 2021 Junctionless In0. 3Ga0. 7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications M Vadizadeh, M Fallahnejad, R Ejlali
Journal of Computational Electronics 21 (5), 1127-1137, 2022
6 2022 Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure M Vadizadeh, M Fallahnejad, M Shaveisi, R Ejlali, F Bajelan
Silicon 15 (2), 1093-1103, 2023
5 2023 High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5 Ge0.5 and asymmetric spacers with outstanding analog/RF parameters M Fallahnejad, A Amini, A Khodabakhsh, M Vadizadeh
Applied Physics A 128 (1), 47, 2022
5 2022 Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless Ga M Vadizadeh, M Fallahnejad
International Journal of Modern Physics B 35 (23), 2150238, 2021
5 2021 Performance estimation of junctionless field effect diode M Vadizadeh
Applied Physics A: Materials Science and Processing 125 (8), 1-9, 2019
5 2019 Low-noise Si/Si0.5 Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications M Fallahnejad, A Khodabakhsh, A Amini, M Vadizadeh
Applied Physics A 129 (5), 336, 2023
2 2023 Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in Ga B Rajabi, M Vadizadeh
International Journal of Modern Physics B 35 (12), 2150161, 2021
2 2021 
Mohammad FallahnejadAssistant Professor of Electronic Engineering,Central Tehran Branch, Islamic Azad UniversityVahvistettu sähköpostiosoite verkkotunnuksessa iauctb.ac.ir
