| High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 65 (9), 3769 - 3774, 2018 | 228 | 2018 |
| Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... Applied Physics Letters 112 (222903), 2018 | 125 | 2018 |
| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 114 | 2020 |
| Optical three-dimensional profiling of charged domain walls in ferroelectrics by Cherenkov second-harmonic generation T Kämpfe, P Reichenbach, M Schröder, A Haußmann, LM Eng, T Woike, ... Physical Review B 89 (3), 035314, 2014 | 113 | 2014 |
| Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals C Godau, T Kämpfe, A Thiessen, LM Eng, A Haußmann ACS Nano 11 (5), 4816-4824, 2017 | 112 | 2017 |
| A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, D Lehninger, ... 2019 IEEE International Electron Device Meeting (IEDM), 28.7 .1 - 28.7 .4, 2020 | 104 | 2020 |
| Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ... Applied Physics Letters 115 (22), 222902, 2019 | 102 | 2019 |
| Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ... physica status solidi (a) 217 (8), 2070030, 2020 | 96 | 2020 |
| Ultra Low Power Flexible Precision FeFET based Analog In-memory Computing T Soliman, F Müller, T Kirchner, T Hoffmann, H Ganem, E Karimov, T Ali, ... 2020 IEEE International Electron Device Meeting (IEDM), 29.2.1 - 29.2.4, 2021 | 82 | 2021 |
| On the Origin of Wake‐Up and Antiferroelectric‐Like behavior in Ferroelectric Hafnium Oxide M Lederer, R Olivo, D Lehninger, S Abdulazhanov, T Kämpfe, S Kirbach, ... physica status solidi (RRL) - Rapid Research Letters 15 (5), 2021 | 73 | 2021 |
| Ferroelectric field effect transistors as a synapse for neuromorphic application M Lederer, T Kämpfe, T Ali, F Müller, R Olivo, R Hoffmann, N Laleni, ... IEEE Transactions on Electron Devices 68 (5), 2295-2300, 2021 | 69 | 2021 |
| Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2 C Mart, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 112 (5), 052905, 2018 | 68 | 2018 |
| A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing C Li, F Müller, T Ali, R Olivo, M Imani, S Deng, C Zhuo, T Kämpfe, X Yin, ... 2020 IEEE International Electron Device Meeting (IEDM), 29.3.1 - 29.3.4, 2021 | 65 | 2021 |
| Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films C Mart, K Kühnel, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 114 (10), 102903, 2019 | 60 | 2019 |
| Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction M Lederer, T Kämpfe, N Vogel, D Utess, B Volkmann, T Ali, R Olivo, ... Nanomaterials 10 (2), 384, 2020 | 56 | 2020 |
| Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications S De, A Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ... Frontiers in Nanotechnology, 2022 | 42 | 2022 |
| Real-time three-dimensional profiling of ferroelectric domain walls T Kämpfe, P Reichenbach, A Haußmann, T Woike, E Soergel, LM Eng Applied Physics Letters 107 (15), 2015 | 41 | 2015 |
| In-Memory Nearest Neighbor Search with FeFET Multi-Bit Content-Addressable Memories A Kazemi, MM Sharifi, AF Balon Laguna, F Müller, R Rajaei, R Olivo, ... Design, Automation & Test in Europe (DATE) 2021, 2021 | 40 | 2021 |
| Piezoelectric Response of Polycrystalline Silicon-Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles C Mart, T Kämpfe, R Hoffmann, S Eßlinger, S Kirbach, K Kühnel, ... Advanced Electronic Materials 6 (3), 1901015, 2020 | 39 | 2020 |
| FeFET Multi-Bit Content-Addressable Memories for In-Memory Nearest Neighbor Search A Kazemi, MM Sharifi, AF Laguna, F Müller, X Yin, T Kämpfe, M Niemier, ... IEEE Transactions on Computers 71 (10), 2565 - 2576, 2021 | 38 | 2021 |
Kai NiUniversity of Notre DameVerified email at nd.edu
