Agnes Roussy
Agnes Roussy
Mines Saint Etienne - une école de l'IMT
Verified email at emse.fr
Title
Cited by
Cited by
Year
NbN multilayer technology on R-plane sapphire
JC Villegirr, N Hadacek, S Monso, B Delnet, A Roussy, P Febvre, ...
IEEE transactions on applied superconductivity 11 (1), 68-71, 2001
482001
Virtual metrology models for predicting physical measurement in semiconductor manufacturing
A Ferreira, A Roussy, L Condé
2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 149-154, 2009
342009
Formation mechanisms of Cu (In, Ga) Se2 solar cells prepared from electrodeposited precursors
F Oliva, C Broussillou, M Annibaliano, N Frederich, PP Grand, A Roussy, ...
Thin Solid Films 535, 127-132, 2013
272013
Virtual metrology modeling for cvd film thickness
J Besnard, D Gleispach, H Gris, A Ferreira, A Roussy, C Kernaflen, ...
International Journal of Control Science and Engineering 2 (3), 26-33, 2012
242012
Tool condition diagnosis with a recipe-independent hierarchical monitoring scheme
J Blue, D Gleispach, A Roussy, P Scheibelhofer
IEEE transactions on semiconductor manufacturing 26 (1), 82-91, 2012
172012
Feedforward Run-to-Run Control for Reduced Parametric Transistor Variation in CMOS Logic 0.13Technology
N Jedidi, P Sallagoity, A Roussy, S Dauzère-Pérès
IEEE transactions on semiconductor manufacturing 24 (2), 273-279, 2011
122011
Efficient FDC based on hierarchical tool condition monitoring scheme
J Blue, A Roussy, A Thieullen, J Pinaton
2012 SEMI Advanced Semiconductor Manufacturing Conference, 359-364, 2012
102012
Virtual metrology models for predicting avera PECVD oxide film thickne
A Ferreira, A Roussy, C Kernaflen, D Gleispach, G Hayderer, H Gris, ...
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 1-6, 2011
72011
HTS pulse-stretcher and second order modulator: Design and first results
A Roussy, S Karthikeyan, I Oomen, T Ortlepp, EH Sujiono, A Brinkman, ...
IEEE transactions on applied superconductivity 15 (2), 457-460, 2005
72005
On-chip high-frequency diagnostic of RSFQ logic cells
P Febvre, JC Berthet, D Ney, A Roussy, JW Tao, G Angenieux, ...
IEEE transactions on applied superconductivity 11 (1), 284-287, 2001
72001
A Structure Data-Driven Framework for Virtual Metrology Modeling
WT Yang, J Blue, A Roussy, J Pinaton, MS Reis
IEEE Transactions on Automation Science and Engineering 17 (3), 1297-1306, 2019
42019
New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuits
L Villégier, Hadacek, Jorel,Thomassin, Bouchiat, Faucher, Febvre, Roussy
J. Phys. IV 12 (3), 129 - 132, 2002
4*2002
Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory
A Roussy, M Bocquet, M Bileci, S Bégouin, A Marchadier
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2015
32015
FDC R2R variation monitoring for sensor level diagnosis in tool condition hierarchy
J Blue, A Roussy, J Pinaton
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014 …, 2014
32014
Implementation of MIMO R2R control regulation on furnaces processes
B Richard, A Roussy, L Brun, D Pompier, C Alegret, J Pinaton
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 143-148, 2010
32010
A physics-informed Run-to-Run control framework for semiconductor manufacturing
WT Yang, J Blue, A Roussy, J Pinaton, MS Reis
Expert Systems with Applications 155, 113424, 2020
22020
Device pattern impact on optical endpoint detection by interferometry for STI CMP
S Bourzgui, A Roussy, G Georges, E Faivre, K Labory, A Allard
ICPT 2017; International Conference on Planarization/CMP Technology, 1-6, 2017
22017
Virtual metrology modeling based on gaussian bayesian network
WT Yang, J Blue, A Roussy, MS Reis, J Pinaton
2018 Winter Simulation Conference (WSC), 3574-3582, 2018
12018
Advanced run-to-run controller in semiconductor manufacturing with real-time equipment condition: APC: Advanced process control; AM: Advanced metrology
WT Yang, J Blue, A Roussy, M Reis, J Pinaton
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2018
12018
Key Effects and Process Parameters Extraction on the CD of Reactive Ion Etching (RIE) Based on DOE Modeling
M Rizquez, A Roussy, J Blue, L Bucelle, J Pinaton, J Pasquet
IEEE Transactions on Semiconductor Manufacturing 30 (4), 539-546, 2017
12017
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Articles 1–20