Majeed A Foad
Majeed A Foad
Conservia Prime Technologies
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Cited by
Cited by
Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study
B Sadigh, TJ Lenosky, SK Theiss, MJ Caturla, TD de la Rubia, MA Foad
Physical review letters 83 (21), 4341, 1999
Method for conformal plasma immersed ion implantation assisted by atomic layer deposition
H Hanawa, SM Cho, MA Foad
US Patent 8,709,924, 2014
Dry photoresist stripping process and apparatus
SM Cho, MA Foad
US Patent App. 12/001,472, 2008
Removal of surface dopants from a substrate
K Ramaswamy, KS Collins, B Gallo, H Hanawa, MA Foad, MA Hilkene, ...
US Patent 7,989,329, 2011
Chamber for processing hard disk drive substrates
MA Foad, MA Hilkene, PI Porshnev, JA Marin, MD Scotney-Castle
US Patent App. 12/955,619, 2011
Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
D Choi, DH Lee, T Poon, M Vellaikal, P Porshnev, M Foad
US Patent 8,642,128, 2014
Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs
G Timp, A Agarwal, FH Baumann, T Boone, M Buonanno, R Cirelli, ...
International Electron Devices Meeting. IEDM Technical Digest, 930-932, 1997
Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
H Hanawa, SM Cho, MA Foad
US Patent App. 12/028,423, 2009
Boron ion sources for ion implantation apparatus
MA Foad
US Patent 5,977,552, 1999
Large enhancement of boron solubility in silicon due to biaxial stress
B Sadigh, TJ Lenosky, MJ Caturla, AA Quong, LX Benedict, ...
Applied physics letters 80 (25), 4738-4740, 2002
CH4/H2: A universal reactive ion etch for II‐VI semiconductors?
MA Foad, CDW Wilkinson, C Dunscomb, RH Williams
Applied physics letters 60 (20), 2531-2533, 1992
Raman scattering of coupled longitudinal optical phonon‐plasmon modes in dry etched n+‐GaAs
PD Wang, MA Foad, CM Sotomayor‐Torres, S Thoms, M Watt, R Cheung, ...
Journal of applied physics 71 (8), 3754-3759, 1992
Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants
V Moroz, YS Oh, D Pramanik, H Graoui, MA Foad
Applied Physics Letters 87 (5), 051908, 2005
Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
A Al-Bayati, B Adibi, M Foad, S Somekh
US Patent 7,225,047, 2007
Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ...
Applied physics letters 89 (19), 192105, 2006
Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
Y Ma, KZ Ahmed, KL Cunningham, RC McIntosh, AJ Mayur, H Liang, ...
US Patent 7,078,302, 2006
Ion implanter with post mass selection deceleration
JG England, S Moffatt, DG Armour, M Foad
US Patent 5,969,366, 1999
Model for conductance in dry‐etch damaged n‐GaAs structures
M Rahman, NP Johnson, MA Foad, AR Long, MC Holland, ...
Applied physics letters 61 (19), 2335-2337, 1992
High-resolution dry etching of zinc telluride: characterization of etched surfaces by x-ray photoelectron spectroscopy, photoluminescence and Raman scattering
MA Foad, M Watt, AP Smart, CMS Torres, CDW Wilkinson, W Kuhn, ...
Semiconductor Science and Technology 6 (9A), A115, 1991
New technique for dry etch damage assessment of semiconductors
MA Foad, S Thoms, CDW Wilkinson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
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