| Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm Y Wei, A Gin, M Razeghi, GJ Brown Applied Physics Letters 81 (19), 3675-3677, 2002 | 195 | 2002 |
| Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications Y Wei, A Gin, M Razeghi, GJ Brown Applied physics letters 80 (18), 3262-3264, 2002 | 194 | 2002 |
| Uncooled operation of type-II InAs∕ GaSb superlattice photodiodes in the midwavelength infrared range Y Wei, A Hood, H Yau, A Gin, M Razeghi, MZ Tidrow, V Nathan Applied Physics Letters 86 (23), 2005 | 186 | 2005 |
| Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes A Gin, Y Wei, A Hood, A Bajowala, V Yazdanpanah, M Razeghi, M Tidrow Applied physics letters 84 (12), 2037-2039, 2004 | 143 | 2004 |
| Growth, defect formation, and morphology control of germanium–silicon semiconductor nanowire heterostructures SA Dayeh, J Wang, N Li, JY Huang, AV Gin, ST Picraux Nano letters 11 (10), 4200-4206, 2011 | 139 | 2011 |
| An alternative geometry for quantum-dot cellular automata A Gin, PD Tougaw, S Williams Journal of Applied Physics 85 (12), 8281-8286, 1999 | 132 | 1999 |
| Passivation of type II InAs/GaSb superlattice photodiodes A Gin, Y Wei, J Bae, A Hood, J Nah, M Razeghi Thin Solid Films 447, 489-492, 2004 | 83 | 2004 |
| Two-color multi-section quantum dot distributed feedback laser NA Naderi, F Grillot, K Yang, JB Wright, A Gin, LF Lester Optics express 18 (26), 27028-27035, 2010 | 69 | 2010 |
| Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport SA Dayeh, AV Gin, ST Picraux Applied Physics Letters 98 (16), 2011 | 64 | 2011 |
| High quality type II InAs/GaSb superlattices with cutoff wavelength∼ 3.7 μm using interface engineering Y Wei, J Bae, A Gin, A Hood, M Razeghi, GJ Brown, M Tidrow Journal of Applied Physics 94 (7), 4720-4722, 2003 | 62 | 2003 |
| Hierarchical design of quantum-dot cellular automata devices A Gin, S Williams, H Meng, PD Tougaw Journal of Applied Physics 85 (7), 3713-3720, 1999 | 62 | 1999 |
| Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs M Razeghi, Y Wei, J Bae, A Gin, A Hood, J Jiang, J Nah Active and Passive Optical Components for Wdm Communications Iii 5246, 501-511, 2003 | 55 | 2003 |
| Doping tunable resonance: Toward electrically tunable mid-infrared metamaterials X Miao, B Passmore, A Gin, W Langston, S Vangala, W Goodhue, ... Applied Physics Letters 96 (10), 2010 | 45 | 2010 |
| Interaction between metamaterial resonators and intersubband transitions in semiconductor quantum wells A Gabbay, J Reno, JR Wendt, A Gin, MC Wanke, MB Sinclair, E Shaner, ... Applied Physics Letters 98 (20), 2011 | 42 | 2011 |
| Few-layer graphene characterization by near-field scanning microwave microscopy VV Talanov, CD Barga, L Wickey, I Kalichava, E Gonzales, EA Shaner, ... Acs Nano 4 (7), 3831-3838, 2010 | 39 | 2010 |
| High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays M Razeghi, Y Wei, A Gin, A Hood, V Yazdanpanah, MZ Tidrow, V Nathan Infrared Technology and Applications XXXI 5783, 86-97, 2005 | 34 | 2005 |
| Type-II InAs/GaSb superlattices and detectors with lambda c> 18m M Razeghi, Y Wei, A Gin, GJ Brown, DK Johnstone Photodetector Materials and Devices VII 4650, 111-116, 2002 | 34 | 2002 |
| Recent advances in InAs/GaSb superlattices for very long wavelength infrared detection GJ Brown, F Szmulowicz, K Mahalingam, S Houston, Y Wei, A Gin, ... Quantum Sensing: Evolution and Revolution from Past to Future 4999, 457-466, 2003 | 22 | 2003 |
| Infrared detection from GaInAs/InP nanopillar arrays A Gin, B Movaghar, M Razeghi, GJ Brown Nanotechnology 16 (9), 1814, 2005 | 21 | 2005 |
| Quantum sensing using Type II InAs/GaSb superlattice for infrared detection M Razeghi, A Gin, Y Wei, J Bae, J Nah Microelectronics journal 34 (5-8), 405-410, 2003 | 21 | 2003 |
Igal BrenerSenior Scientist, Sandia National LabsVerified email at sandia.gov
