| Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ... Journal of Crystal Growth, 2013 | 66 | 2013 |
| Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating S Choi, H Jin Kim, Z Lochner, J Kim, RD Dupuis, AM Fischer, R Juday, ... Journal of Crystal Growth 388, 137-142, 2014 | 59 | 2014 |
| Compositional instability in InAlN/GaN lattice-matched epitaxy QY Wei, T Li, Y Huang, JY Huang, ZT Chen, T Egawa, FA Ponce Applied Physics Letters 100 (9), 092101-092101-3, 2012 | 43 | 2012 |
| Plasticity and optical properties of GaN under highly localized nanoindentation stress fields PG Caldas, EM Silva, R Prioli, JY Huang, R Juday, AM Fischer, FA Ponce Journal of Applied Physics 121 (12), 125105, 2017 | 35 | 2017 |
| The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells T Li, QY Wei, AM Fischer, JY Huang, YU Huang, FA Ponce, JP Liu, ... Applied Physics Letters 102 (4), 041115-041115-4, 2013 | 29 | 2013 |
| Transmission electron microscopy study of GaInNAs (Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy R Oshima, JY Huang, N Miyashita, K Matsubara, Y Okada, FA Ponce Applied Physics Letters 99 (19), 191907-191907-3, 2011 | 21 | 2011 |
| Free carrier accumulation at cubic AlGaN/GaN heterojunctions QY Wei, T Li, JY Huang, FA Ponce, E Tschumak, A Zado, DJ As Applied Physics Letters 100 (14), 142108-142108-4, 2012 | 18 | 2012 |
| Hydrogen-related, deeply bound excitons in Mg-doped GaN films R Juday, AM Fischer, Y Huang, JY Huang, HJ Kim, JH Ryou, RD Dupuis, ... Applied Physics Letters 103 (8), 082103, 2013 | 15 | 2013 |
| Strain-related optical properties of ZnO crystals due to nanoindentation on various surface orientations R Juday, E M Silva, J Y Huang, P G Caldas, R Prioli, FA Ponce Journal of Applied Physics 113 (18), 183511-183511-10, 2013 | 15 | 2013 |
| The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals JY Huang, FA Ponce, PG Caldas, R Prioli, CM Almeida Journal of Applied Physics 114 (20), 203503, 2013 | 10 | 2013 |
| Capacitance Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions DJ As, A Zado, QY Wei, T Li, JY Huang, FA Ponce Japanese Journal of Applied Physics 52 (8S), 08JN04, 2013 | 9 | 2013 |
| Plastic hardening in cubic semiconductors by nanoscratching PG Caldas, R Prioli, CM Almeida, JY Huang, FA Ponce Journal of Applied Physics 109 (1), 013502-013502-5, 2011 | 7 | 2011 |
| Structural and optical properties of II-VI and III-V compound semiconductors J Huang Arizona State University, 2013 | 1 | 2013 |
| Microstructure of nanoscratched semiconductors JY Huang, FA Ponce, PG Caldas, CM Almeida, R Prioli Journal of Physics: Conference Series 326 (1), 012061, 2011 | 1 | 2011 |
