Flexible ionic‐electronic hybrid oxide synaptic TFTs with programmable dynamic plasticity for brain‐inspired neuromorphic computing RA John, J Ko, MR Kulkarni, N Tiwari, NA Chien, NG Ing, WL Leong, ...
Small 13 (32), 1701193, 2017
166 2017 Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 2011
139 2011 Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 … ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 2009
136 2009 AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111) S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ...
Applied Physics Letters 101 (8), 2012
123 2012 Reactive sputter deposition and characterization of tantalum nitride thin films K Radhakrishnan, NG Ing, R Gopalakrishnan
Materials Science and Engineering: B 57 (3), 224-227, 1999
111 1999 Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 2011
99 2011 Gallium Nitride Transistors on Large-Diameter Si(111) Substrate S Arulkumaran, GI Ng
Gallium Nitride (GaN): Physics, Devices, and Technology, 63-107, 2015
98 * 2015 0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax M Wojtowicz, R Lai, DC Streit, GI Ng, TR Block, KL Tan, PH Liu, ...
IEEE Electron Device Letters 15 (11), 477-479, 1994
93 1994 Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 2013
88 2013 Low‐ and high‐field transport properties of pseudomorphic Inx 1−x As/In0.52 Al0.48 As (0.53≤x ≤0.65) modulation‐doped heterostructures WP Hong, GI Ng, PK Bhattacharya, D Pavlidis, S Willing, B Das
Journal of Applied Physics 64 (4), 1945-1949, 1988
87 1988 InAlN/GaN HEMTs on Si With High W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios
IEEE Electron Device Letters 39 (1), 75-78, 2017
86 2017 High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE electron device letters 31 (2), 96-98, 2009
84 2009 Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
83 2012 Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C ZH Liu, S Arulkumaran, GI Ng
Applied physics letters 94 (14), 2009
79 2009 Improved Linearity for Low-Noise Applications in 0.25- ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
75 2010 Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
74 2011 Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
71 2012 Low-temperature chemical transformations for high-performance solution-processed oxide transistors RA John, NA Chien, S Shukla, N Tiwari, C Shi, NG Ing, N Mathews
Chemistry of Materials 28 (22), 8305-8313, 2016
69 2016 Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
68 2007 Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x> 0.53) HEMTs GI Ng, D Pavlidis, M Jaffe, J Singh, HF Chau
IEEE transactions on electron devices 36 (10), 2249-2259, 1989
67 1989 