Ali Khakifirooz
Ali Khakifirooz
Verified email at intel.com
Title
Cited by
Cited by
Year
Electroactive polymer actuated medication infusion pumps
L Couvillon, P Nicholas, M Banik
US Patent App. 10/262,991, 2004
8892004
Datapath architecture for high area efficiency
C Shiah, M Wang, CC Shen
US Patent 7,054,178, 2006
2962006
A simple semiempirical short-channel MOSFET current–voltage model continuous across all regions of operation and employing only physical parameters
A Khakifirooz, OM Nayfeh, D Antoniadis
IEEE Transactions on Electron Devices 56 (8), 1674-1680, 2009
2272009
High-K/metal gate CMOS finFET with improved pFET threshold voltage
VS Basker, K Cheng, BB Doris, JE Faltermeier, A Khakifirooz
US Patent 7,993,999, 2011
1962011
Integrated circuit with a thin body field effect transistor and capacitor
K Cheng, B Doris, A Khakifirooz, GG Shahidi
US Patent 8,659,066, 2014
1812014
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
DA Antoniadis, I Aberg, CN Chleirigh, OM Nayfeh, A Khakifirooz, JL Hoyt
IBM Journal of Research and Development 50 (4.5), 363-376, 2006
1722006
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1592009
MOSFET performance scaling—Part I: Historical trends
A Khakifirooz, DA Antoniadis
IEEE Transactions on Electron Devices 55 (6), 1391-1400, 2008
1302008
Product registration using an electronically read serial number
R Schultz
US Patent App. 10/153,157, 2003
1252003
Transistor performance scaling: The role of virtual source velocity and its mobility dependence
A Khakifirooz, DA Antoniadis
2006 International Electron Devices Meeting, 1-4, 2006
1152006
MOSFET performance scaling—Part II: Future directions
A Khakifirooz, DA Antoniadis
IEEE Transactions on Electron Devices 55 (6), 1401-1408, 2008
1032008
Malleable paste for filling bone defects
AA Gertzman, MH Sunwoo
US Patent App. 10/084,090, 2004
103*2004
Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same
X Cai, R Xie, A Khakifirooz, K Cheng
US Patent 8,921,191, 2014
1012014
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012
1012012
Extremely thin semiconductor-on-insulator (ETSOI) FET with a back gate and reduced parasitic capacitance
A Khakifirooz, K Cheng, BB Doris
US Patent 8,507,989, 2013
952013
Method and apparatus for DNA collection
J Sangha, J Schumm, J Fox, R Bever
US Patent App. 10/020,257, 2003
942003
Semiconductor devices fabricated by doped material layer as dopant source
K Cheng, BB Doris, BS Haran, A Khakifirooz, GG Shahidi
US Patent 8,394,710, 2013
902013
ETSOI Technology for 20nm and Beyond
A Khakifirooz
SOI Consortium Workshop: Fully Depleted SOI, 2011
892011
Low-temperature selective epitaxial growth of silicon for device integration
B Hekmatshoar-Tabari, A Khakifirooz, A Reznicek, DK Sadana, ...
US Patent 10,011,920, 2018
86*2018
Strain scaling for CMOS
SW Bedell, A Khakifirooz, DK Sadana
Mrs Bulletin 39 (2), 131-137, 2014
812014
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