Room-temperature high spin–orbit torque due to quantum confinement in sputtered Bi x Se (1–x) films M DC, R Grassi, JY Chen, M Jamali, DR Hickey, D Zhang, Z Zhao, H Li, ... Nature materials 17, 800-808, 2018 | 465 | 2018 |
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ... Nature electronics 1 (11), 582-588, 2018 | 349 | 2018 |
Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin−Orbit Coupling of Topological Insulator Bi2Se3 M Jamali, JS Lee, JS Jeong, F Mahfouzi, Y Lv, Z Zhao, BK Nikolic, ... Nano letters 15 (10), 7126-7132, 2015 | 326 | 2015 |
Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy Z Zhao, M Jamali, AK Smith, JP Wang Applied Physics Letters 106 (13), 2015 | 132 | 2015 |
In-memory processing on the spintronic CRAM: From hardware design to application mapping M Zabihi, ZI Chowdhury, Z Zhao, UR Karpuzcu, JP Wang, SS Sapatnekar IEEE Transactions on Computers 68 (8), 1159-1173, 2018 | 112 | 2018 |
Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology Z Zhao, M Jamali, N D'Souza, D Zhang, S Bandyopadhyay, J Atulasimha, ... Applied Physics Letters 109 (9), 2016 | 107 | 2016 |
External‐field‐free spin Hall switching of perpendicular magnetic nanopillar with a dipole‐coupled composite structure Z Zhao, AK Smith, M Jamali, JP Wang Advanced Electronic Materials 6 (5), 1901368, 2020 | 68* | 2020 |
Fast magnetoelectric device based on current-driven domain wall propagation JP Wang, M Jamali, SS Sapatnekar, MG Mankalale, Z Liang, AK Smith, ... US Patent 10,217,522, 2019 | 62 | 2019 |
A comparative study between spin-transfer-torque and spin-Hall-effect switching mechanisms in PMTJ using SPICE I Ahmed, Z Zhao, MG Mankalale, SS Sapatnekar, JP Wang, CH Kim IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017 | 52 | 2017 |
PIMBALL: Binary neural networks in spintronic memory S Resch, SK Khatamifard, ZI Chowdhury, M Zabihi, Z Zhao, JP Wang, ... ACM Transactions on Architecture and Code Optimization (TACO) 16 (4), 1-26, 2019 | 50 | 2019 |
CoMET: Composite-input magnetoelectric-based logic technology MG Mankalale, Z Liang, Z Zhao, CH Kim, JP Wang, SS Sapatnekar IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017 | 45 | 2017 |
Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions JY Chen, M Dc, D Zhang, Z Zhao, M Li, JP Wang Applied Physics Letters 111 (1), 2017 | 44 | 2017 |
Using spin-Hall MTJs to build an energy-efficient in-memory computation platform M Zabihi, Z Zhao, DC Mahendra, ZI Chowdhury, S Resch, T Peterson, ... 20th International Symposium on Quality Electronic Design (ISQED), 52-57, 2019 | 43 | 2019 |
Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet M Dc, T Liu, JY Chen, T Peterson, P Sahu, H Li, Z Zhao, M Wu, JP Wang Applied Physics Letters 114 (10), 2019 | 38 | 2019 |
MOUSE: Inference in non-volatile memory for energy harvesting applications S Resch, SK Khatamifard, ZI Chowdhury, M Zabihi, Z Zhao, H Cilasun, ... 2020 53rd Annual IEEE/ACM International Symposium on Microarchitecture …, 2020 | 33 | 2020 |
SkyLogic—A proposal for a skyrmion-based logic device MG Mankalale, Z Zhao, JP Wang, SS Sapatnekar IEEE Transactions on Electron Devices 66 (4), 1990-1996, 2019 | 33 | 2019 |
Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions DL Zhang, C Sun, Y Lv, KB Schliep, Z Zhao, JY Chen, PM Voyles, ... Physical Review Applied 9 (4), 044028, 2018 | 32 | 2018 |
Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling D Zhang, M Bapna, W Jiang, D Sousa, YC Liao, Z Zhao, Y Lv, P Sahu, ... Nano letters 22 (2), 622-629, 2022 | 31 | 2022 |
Evaluation of operating margin and switching probability of voltage-controlled magnetic anisotropy magnetic tunnel junctions J Song, I Ahmed, Z Zhao, D Zhang, SS Sapatnekar, JP Wang, CH Kim IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018 | 26 | 2018 |
A DNA read alignment accelerator based on computational RAM ZI Chowdhury, M Zabihi, SK Khatamifard, Z Zhao, S Resch, M Razaviyayn, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 6 …, 2020 | 23 | 2020 |