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Christian Berger
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Novel type-II material system for laser applications in the near-infrared regime
C Berger, C Möller, P Hens, C Fuchs, W Stolz, SW Koch, A Ruiz Perez, ...
AIP advances 5 (4), 047105, 2015
412015
Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μm
C Möller, C Fuchs, C Berger, A Ruiz Perez, M Koch, J Hader, JV Moloney, ...
Applied Physics Letters 108 (7), 2016
322016
High-temperature operation of electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As “W”-quantum well lasers emitting at 1.3 µm
C Fuchs, A Brüggemann, MJ Weseloh, C Berger, C Möller, S Reinhard, ...
Scientific reports 8 (1), 1422, 2018
242018
Excitonic transitions in highly efficient (GaIn) As/Ga (AsSb) type-II quantum-well structures
S Gies, C Kruska, C Berger, P Hens, C Fuchs, A Ruiz Perez, ...
Applied Physics Letters 107 (18), 182104, 2015
212015
Quantum-memory effects in the emission of quantum-dot microcavities
C Berger, U Huttner, M Mootz, M Kira, SW Koch, JS Tempel, M Aßmann, ...
Physical review letters 113 (9), 093902, 2014
212014
Electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As single ‘W’-quantum well laser at 1.2 µm
C Fuchs, C Berger, C Möller, M Weseloh, S Reinhard, J Hader, ...
Electronics Letters 52 (22), 1875-1877, 2016
182016
Gain spectroscopy of a type-II VECSEL chip
C Lammers, M Stein, C Berger, C Möller, C Fuchs, AR Perez, ...
Applied Physics Letters 109 (23), 232107, 2016
172016
Fundamental transverse mode operation of a type‐II vertical‐external‐cavity surface‐emitting laser at 1.2 µm
C Möller, F Zhang, C Fuchs, C Berger, A Rehn, A Ruiz Perez, ...
Electronics Letters 53 (2), 93-94, 2017
102017
Temperature-dependent spectral properties of (GaIn) As/Ga (AsSb)/(GaIn) As W-quantum well heterostructure lasers
C Fuchs, A Baeumner, A Brueggemann, C Berger, C Moeller, S Reinhard, ...
arXiv preprint arXiv:2012.01522, 2020
32020
Microscopic Theory of Semiconductor Laser Material Systems
C Berger
Philipps-Universität Marburg, 2016
32016
The development and fundamental analysis of type-II VECSELs at 1.2 µm (Conference Presentation)
C Möller, C Fuchs, C Berger, F Zhang, A Rahimi-Iman, M Koch, AR Perez, ...
Vertical External Cavity Surface Emitting Lasers (VECSELs) VII 10087, 115-115, 2017
22017
Time-resolved gain spectroscopy on type-I and type-II VECSEL chips
C Lammers, M Stein, M Fey, C Möller, C Fuchs, AR Perez, C Berger, ...
CLEO: Applications and Technology, JW2A. 39, 2016
12016
Author Correction: High-temperature operation of electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As “W”-quantum well lasers emitting at 1.3 µm
C Fuchs, A Brüggemann, MJ Weseloh, C Berger, C Möller, S Reinhard, ...
Scientific Reports 8 (1), 7891, 2018
2018
1.2 μm emitting VECSEL based on type-II aligned QWs
C Möller, C Berger, C Fuchs, AR Perez, SW Koch, J Hader, JV Moloney, ...
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI 9734, 57-61, 2016
2016
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