Steven Ringel
Steven Ringel
Vahvistettu sähköpostiosoite verkkotunnuksessa - Kotisivu
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 2016
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
The effects of CdCl2 on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells
SA Ringel, AW Smith, MH MacDougal, A Rohatgi
Journal of applied physics 70 (2), 881-889, 1991
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ...
Applied Physics Letters 84 (3), 374-376, 2004
Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy
TJ Grassman, MR Brenner, S Rajagopalan, R Unocic, R Dehoff, M Mills, ...
Applied Physics Letters 94 (23), 2009
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel
Journal of Applied physics 98 (5), 2005
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 2017
Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage
MR Lueck, CL Andre, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
IEEE Electron Device Letters 27 (3), 142-144, 2006
Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes
A Hierro, D Kwon, SA Ringel, M Hansen, JS Speck, UK Mishra, ...
Applied Physics Letters 76 (21), 3064-3066, 2000
Impact of dislocation densities on n+∕ p and p+∕ n junction GaAs diodes and solar cells on SiGe virtual substrates
CL Andre, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
Journal of applied physics 98 (1), 2005
Hydrogen passivation of deep levels in
A Hierro, SA Ringel, M Hansen, JS Speck, UK Mishra, SP DenBaars
Applied Physics Letters 77 (10), 1499-1501, 2000
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion
RM Sieg, SA Ringel, SM Ting, EA Fitzgerald, RN Sacks
Journal of electronic materials 27, 900-907, 1998
Nucleation-related defect-free GaP/Si (100) heteroepitaxy via metal-organic chemical vapor deposition
TJ Grassman, JA Carlin, B Galiana, LM Yang, F Yang, MJ Mills, SA Ringel
Applied Physics Letters 102 (14), 2013
Toward device-quality GaAs growth by molecular beam epitaxy on offcut substrates
RM Sieg, SA Ringel, SM Ting, SB Samavedam, M Currie, T Langdo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates
JA Carlin, SA Ringel, EA Fitzgerald, M Bulsara, BM Keyes
Applied Physics Letters 76 (14), 1884-1886, 2000
Effect of threading dislocation density on Ni∕ n-GaN Schottky diode IV characteristics
AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel
Journal of applied physics 100 (2), 2006
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
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Artikkelit 1–20