| Novel type-II material system for laser applications in the near-infrared regime C Berger, C Möller, P Hens, C Fuchs, W Stolz, SW Koch, AR Perez, ... AIP advances 5 (4), 047105, 2015 | 41 | 2015 |
| Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μm C Möller, C Fuchs, C Berger, AR Perez, M Koch, J Hader, JV Moloney, ... Applied Physics Letters 108 (7), 071102, 2016 | 32 | 2016 |
| Author Correction: High-temperature operation of electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As “W”-quantum well lasers emitting at 1.3 µm C Fuchs, A Brüggemann, MJ Weseloh, C Berger, C Möller, S Reinhard, ... Scientific reports 8 (1), 7891, 2018 | 24* | 2018 |
| Dynamics of charge-transfer excitons in type-II semiconductor heterostructures M Stein, C Lammers, PH Richter, C Fuchs, W Stolz, M Koch, O Vänskä, ... Physical Review B 97 (12), 125306, 2018 | 24 | 2018 |
| High-temperature operation of electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As “W”-quantum well lasers emitting at 1.3 µm C Fuchs, A Brüggemann, MJ Weseloh, C Berger, C Möller, S Reinhard, ... Scientific reports 8 (1), 1422, 2018 | 24 | 2018 |
| Excitonic transitions in highly efficient (GaIn) As/Ga (AsSb) type-II quantum-well structures S Gies, C Kruska, C Berger, P Hens, C Fuchs, AR Perez, NW Rosemann, ... Applied Physics Letters 107 (18), 182104, 2015 | 21 | 2015 |
| Electrical injection type-II (GaIn) As/Ga (AsSb)/(GaIn) As single ‘W’-quantum well laser at 1.2 µm C Fuchs, C Berger, C Möller, M Weseloh, S Reinhard, J Hader, ... Electronics Letters 52 (22), 1875-1877, 2016 | 18 | 2016 |
| Gain spectroscopy of a type-II VECSEL chip C Lammers, M Stein, C Berger, C Möller, C Fuchs, A Ruiz Perez, ... Applied Physics Letters 109 (23), 232107, 2016 | 17 | 2016 |
| MOVPE growth of (GaIn) As/Ga (AsSb)/(GaIn) As type-II heterostructures on GaAs substrate for near infrared laser applications C Fuchs, A Beyer, K Volz, W Stolz Journal of Crystal Growth 464, 201-205, 2017 | 15 | 2017 |
| Fundamental transverse mode operation of a type-II vertical-external-cavity surface-emitting laser at 1.2 µm C Möller, F Zhang, C Fuchs, C Berger, A Rehn, AR Perez, A Rahimi-Iman, ... Electronics Letters, 2016 | 10 | 2016 |
| Atomic structure of ‘W’‐type quantum well heterostructures investigated by aberration‐corrected STEM P Kükelhan, A Beyer, C Fuchs, MJ Weseloh, SW Koch, W Stolz, K Volz Journal of microscopy 268 (3), 259-268, 2017 | 9 | 2017 |
| Band offset in (Ga, In) As/Ga (As, Sb) heterostructures S Gies, MJ Weseloh, C Fuchs, W Stolz, J Hader, JV Moloney, SW Koch, ... Journal of Applied Physics 120 (20), 204303, 2016 | 8 | 2016 |
| Recombination dynamics of type-II excitons in (Ga, In) As/GaAs/Ga (As, Sb) heterostructures S Gies, B Holz, C Fuchs, W Stolz, W Heimbrodt Nanotechnology 28 (2), 025701, 2016 | 7 | 2016 |
| Correlation of optical properties and interface morphology in type-II semiconductor heterostructures L Rost, S Gies, M Stein, C Fuchs, S Nau, P Kükelhan, K Volz, W Stolz, ... Journal of Physics: Condensed Matter 31 (1), 014001, 2018 | 6 | 2018 |
| Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures M Stein, C Lammers, MJ Drexler, C Fuchs, W Stolz, M Koch Physical review letters 121 (1), 017401, 2018 | 5 | 2018 |
| Charge transfer luminescence in (GaIn) As/GaAs/Ga (NAs) double quantum wells P Springer, S Gies, P Hens, C Fuchs, H Han, J Hader, JV Moloney, ... Journal of Luminescence 175, 255-259, 2016 | 4 | 2016 |
| The development and fundamental analysis of type-II VECSELs at 1.2 μm (Conference Presentation) C Möller, C Fuchs, C Berger, F Zhang, A Rahimi-Iman, M Koch, AR Perez, ... Vertical External Cavity Surface Emitting Lasers (VECSELs) VII 10087, 100870L, 2017 | 2 | 2017 |
| Time-resolved gain spectroscopy on type-I and type-II VECSEL chips C Lammers, M Stein, M Fey, C Fuchs, C Möller, A Ruiz-Perez, C Berger, ... CLEO: Applications and Technology, JW2A. 39, 2016 | 1 | 2016 |
| Efficiency Limiting Mechanisms in 1.2–1.3 μm GaInAs/GaAsSb ‘W’Lasers TD Eales, IP Marko, C Kemp, C Fuchs, W Stolz, SJ Sweeney 2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018 | | 2018 |
| Low-Threshold Operation of GaAs-Based (GaIn) As/Ga (AsSb)/(GaIn) As „W"-Quantum Well Lasers Emitting at 1.3 μm C Fuchs, P Ludewig, A Brüggemann, AR Perez, MJ Weseloh, S Reinhard, ... 2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018 | | 2018 |
