Tuomas Haggren
Tuomas Haggren
Post-doctoral Reseracher, The Australian National University
Verified email at aalto.fi
Cited by
Cited by
High quality GaAs nanowires grown on glass substrates
V Dhaka, T Haggren, H Jussila, H Jiang, E Kauppinen, T Huhtio, ...
Nano letters 12 (4), 1912-1918, 2012
Aluminum-Induced Photoluminescence Red Shifts in Core–Shell GaAs/AlxGa1–xAs Nanowires
V Dhaka, J Oksanen, H Jiang, T Haggren, A Nykänen, R Sanatinia, ...
Nano letters 13 (8), 3581-3588, 2013
Protective capping and surface passivation of III-V nanowires by atomic layer deposition
V Dhaka, A Perros, S Naureen, N Shahid, H Jiang, JP Kakko, T Haggren, ...
AIP Advances 6 (1), 015016, 2016
Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers
T Haggren, H Jiang, JP Kakko, T Huhtio, V Dhaka, E Kauppinen, ...
Applied Physics Letters 105 (3), 033114, 2014
Young’s modulus of wurtzite and zinc blende InP nanowires
M Dunaevskiy, P Geydt, E Lähderanta, P Alekseev, T Haggrén, ...
Nano letters 17 (6), 3441-3446, 2017
Electroluminescent cooling in intracavity light emitters: modeling and experiments
T Sadi, P Kivisaari, J Tiira, I Radevici, T Haggren, J Oksanen
Optical and Quantum Electronics 50 (1), 18, 2018
Fabrication of dual-type nanowire arrays on a single substrate
JPP Kakko, T Haggrén, V Dhaka, T Huhtio, A Peltonen, H Jiang, ...
Nano letters 15 (3), 1679-1683, 2015
A technique for large-area position-controlled growth of GaAs nanowire arrays
C Kauppinen, T Haggren, A Kravchenko, H Jiang, T Huhtio, E Kauppinen, ...
Nanotechnology 27 (13), 135601, 2016
Influence of surface passivation on electric properties of individual GaAs nanowires studied by current–voltage AFM measurements
P Geydt, PA Alekseev, MS Dunaevskiy, T Haggrén, JP Kakko, ...
Lithuanian Journal of Physics 56 (2), 2016
III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs
T Haggren, V Khayrudinov, V Dhaka, H Jiang, A Shah, M Kim, H Lipsanen
Scientific reports 8 (1), 1-9, 2018
Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties
T Haggren, A Shah, A Autere, JP Kakko, V Dhaka, M Kim, T Huhtio, Z Sun, ...
Nano Research 10 (8), 2657-2666, 2017
InAs-nanowire-based broadband ultrafast optical switch
J Liu, V Khayrudinov, H Yang, Y Sun, B Matveev, M Remennyi, K Yang, ...
The journal of physical chemistry letters 10 (15), 4429-4436, 2019
I–V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
PA Alekseev, P Geydt, MS Dunaevskiy, E Lähderanta, T Haggrén, ...
Applied Physics Letters 111 (13), 132104, 2017
GaAs nanowires grown on Al-doped ZnO buffer layer
T Haggren, A Perros, V Dhaka, T Huhtio, H Jussila, H Jiang, M Ruoho, ...
Journal of Applied Physics 114 (8), 084309, 2013
Synthesis and properties of ultra-long InP nanowires on glass
V Dhaka, V Pale, V Khayrudinov, JP Kakko, T Haggren, H Jiang, ...
Nanotechnology 27 (50), 505606, 2016
Effects of Zn doping on GaAs nanowires
T Haggren, JP Kakko, H Jiang, V Dhaka, T Huhtio, H Lipsanen
14th IEEE International Conference on Nanotechnology, 825-829, 2014
Thermal conductivity suppression in GaAs–AlAs core–shell nanowire arrays
T Juntunen, T Koskinen, V Khayrudinov, T Haggren, H Jiang, H Lipsanen, ...
Nanoscale 11 (43), 20507-20513, 2019
Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling
J Tiira, I Radevici, T Haggren, T Hakkarainen, P Kivisaari, J Lyytikäinen, ...
Optical and Electronic Cooling of Solids II 10121, 1012109, 2017
Observation of linear IV curves on vertical GaAs nanowires with atomic force microscope
P Geydt, PA Alekseev, M Dunaevskiy, E Lähderanta, T Haggren, ...
Journal of Physics: Conference Series 661 (1), 012031, 2015
Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode
P Geydt, M Dunaevskiy, P Alekseev, JP Kakko, T Haggrén, E Lähderanta, ...
Journal of Physics: Conference Series 769 (1), 012029, 2016
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