Xinke Liu
Xinke Liu
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Few‐layer black phosphorus carbide field‐effect transistor via carbon doping
WC Tan, Y Cai, RJ Ng, L Huang, X Feng, G Zhang, YW Zhang, CA Nijhuis, ...
Advanced Materials 29 (24), 1700503, 2017
Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
Lattice-mismatched In0. 4Ga0. 6As Source/Drain stressors with In Situ doping for strained In0. 53 Ga0. 47 as channel n-MOSFETs
HC Chin, X Gong, X Liu, YC Yeo
Silane and Ammonia Surface Passivation Technology for High-MobilityMOSFETs
HC Chin, X Liu, X Gong, YC Yeo
IEEE transactions on electron devices 57 (5), 973-979, 2010
Impact and origin of interface states in MOS capacitor with monolayer MoS 2 and HfO 2 High-k dielectric
P Xia, X Feng, RJ Ng, S Wang, D Chi, C Li, Z He, X Liu, KW Ang
Scientific reports 7 (1), 1-9, 2017
A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs n-MOSFET with 160 nm gate length and high-quality metal-gate/high-k …
HC Chin, M Zhu, ZC Lee, X Liu, KM Tan, HK Lee, L Shi, LJ Tang, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors
X Liu, J Wu, W Yu, L Chen, Z Huang, H Jiang, J He, Q Liu, Y Lu, D Zhu, ...
Advanced Functional Materials 27 (13), 1606469, 2017
Black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature
X Liu, KW Ang, W Yu, J He, X Feng, Q Liu, H Jiang, D Tang, J Wen, Y Lu, ...
Scientific reports 6 (1), 1-8, 2016
Silane–ammonia surface passivation for gallium arsenide surface-channel n-MOSFETs
HC Chin, M Zhu, X Liu, HK Lee, L Shi, LS Tan, YC Yeo
IEEE electron device letters 30 (2), 110-112, 2009
Interface engineering for the enhancement of carrier transport in black phosphorus transistor with ultra-thin high-k gate dielectric
ZP Ling, JT Zhu, X Liu, KW Ang
Scientific reports 6 (1), 1-9, 2016
1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material
X Liu, Q Liu, C Li, J Wang, W Yu, K Xu, JP Ao
Japanese Journal of Applied Physics 56 (2), 026501, 2017
Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
HC Chin, X Gong, X Liu, Z Lin, YC Yeo
2009 Symposium on VLSI Technology, 244-245, 2009
Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
L Wang, L Chen, SL Wong, X Huang, W Liao, C Zhu, YF Lim, D Li, X Liu, ...
Advanced Electronic Materials 5 (8), 1900393, 2019
Low temperature solution-processed IGZO thin-film transistors
W Xu, L Hu, C Zhao, L Zhang, D Zhu, P Cao, W Liu, S Han, X Liu, F Jia, ...
Applied Surface Science 455, 554-560, 2018
Anomalously enhanced thermal stability of phosphorene via metal adatom doping: an experimental and first-principles study
X Feng, VV Kulish, P Wu, X Liu, KW Ang
Nano Research 9 (9), 2687-2695, 2016
High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method
S Han, SM Liu, YM Lu, PJ Cao, WJ Liu, YX Zeng, F Jia, XK Liu, DL Zhu
Journal of Alloys and Compounds 694, 168-174, 2017
Photon-generated carriers excite superoxide species inducing long-term photoluminescence enhancement of MAPbI 3 perovskite single crystals
X Feng, H Su, Y Wu, H Wu, J Xie, X Liu, J Fan, J Dai, Z He
Journal of Materials Chemistry A 5 (24), 12048-12053, 2017
New insights into multi-shape memory behaviours and liquid crystalline properties of supramolecular polyurethane complexes based on pyridine-containing polyurethane and 4 …
S Chen, F Mo, S Chen, Z Ge, H Yang, J Zuo, X Liu, H Zhuo
Journal of Materials Chemistry A 3 (38), 19525-19538, 2015
High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal–organic chemical vapor deposition
X Liu, HC Chin, LS Tan, YC Yeo
IEEE electron device letters 31 (1), 8-10, 2009
Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
B Ren, M Sumiya, M Liao, Y Koide, X Liu, Y Shen, L Sang
Journal of Alloys and Compounds 767, 600-605, 2018
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