Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
1358 2018 Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ...
IEEE Transactions on electron devices 48 (3), 535-542, 2001
605 2001 On the feasibility of p-type Ga2O3 A Kyrtsos, M Matsubara, E Bellotti
Applied Physics Letters 112 (3), 2018
310 2018 Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN IH Oğuzman, E Bellotti, KF Brennan, J Kolnı́k, R Wang, PP Ruden
Journal of Applied Physics 81 (12), 7827-7834, 1997
261 1997 Ensemble Monte Carlo study of electron transport in wurtzite InN E Bellotti, BK Doshi, KF Brennan, JD Albrecht, PP Ruden
Journal of Applied Physics 85 (2), 916-923, 1999
224 1999 Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6467-6475, 2000
180 2000 Migration mechanisms and diffusion barriers of vacancies in A Kyrtsos, M Matsubara, E Bellotti
Physical Review B 95 (24), 245202, 2017
147 2017 Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model F Bertazzi, M Moresco, E Bellotti
Journal of Applied Physics 106 (6), 2009
136 2009 Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors E Bellotti, K Driscoll, TD Moustakas, R Paiella
Journal of Applied Physics 105 (11), 2009
134 2009 Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6476-6482, 2000
126 2000 Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures E Bellotti, K Driscoll, TD Moustakas, R Paiella
Applied Physics Letters 92 (10), 2008
124 2008 A numerical study of Auger recombination in bulk InGaN F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 97 (23), 2010
108 2010 Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors E Bellotti, D D'Orsogna
IEEE Journal of Quantum Electronics 42 (4), 418-426, 2006
107 2006 A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies M Matsubara, E Bellotti
Journal of Applied Physics 121 (19), 2017
103 2017 Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations M Goano, F Bertazzi, M Penna, E Bellotti
Journal of Applied Physics 102 (8), 2007
102 2007 Numerical analysis of indirect Auger transitions in InGaN F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 101 (1), 2012
91 2012 Alloy scattering in AlGaN and InGaN: A numerical study E Bellotti, F Bertazzi, M Goano
Journal of Applied Physics 101 (12), 2007
85 2007 Migration mechanisms and diffusion barriers of carbon and native point defects in GaN A Kyrtsos, M Matsubara, E Bellotti
Physical Review B 93 (24), 245201, 2016
81 2016 Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC E Bellotti, HE Nilsson, KF Brennan, PP Ruden, R Trew
Journal of Applied Physics 87 (8), 3864-3871, 2000
77 2000 Monte Carlo study of high-field carrier transport in M Hjelm, HE Nilsson, A Martinez, KF Brennan, E Bellotti
Journal of applied physics 93 (2), 1099-1107, 2003
74 2003 
Michele GoanoProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniVahvistettu sähköpostiosoite verkkotunnuksessa polito.it
