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Chia-Feng Lin
Chia-Feng Lin
Professor of Department of Materials Science and Engineering, National Chung Hsing University
Verified email at dragon.nchu.edu.tw
Title
Cited by
Cited by
Year
Study of GaN light-emitting diodes fabricated by laser lift-off technique
CF Chu, FI Lai, JT Chu, CC Yu, CF Lin, HC Kuo, SC Wang
Journal of Applied Physics 95 (8), 3916-3922, 2004
2422004
Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template
DS Wuu, WK Wang, KS Wen, SC Huang, SH Lin, SY Huang, CF Lin, ...
Applied Physics Letters 89 (16), 2006
1952006
Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example
C Zhang, SH Park, D Chen, DW Lin, W Xiong, HC Kuo, CF Lin, H Cao, ...
ACS photonics 2 (7), 980-986, 2015
1582015
Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands
CH Chiu, TC Lu, HW Huang, CF Lai, CC Kao, JT Chu, CC Yu, HC Kuo, ...
Nanotechnology 18 (44), 445201, 2007
1432007
White light LED assembly
WH Chen, HY Huang, KC Chang, CF Lin
US Patent 7,083,302, 2006
1292006
Light-output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls
CC Kao, HC Kuo, HW Huang, JT Chu, YC Peng, YL Hsieh, CY Luo, ...
IEEE photonics technology letters 17 (1), 19-21, 2004
992004
Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall
CF Lin, ZJ Yang, JH Zheng, JJ Dai
IEEE photonics technology letters 17 (10), 2038-2040, 2005
982005
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕ GaN and Ta2O5∕ SiO2 distributed Bragg reflector
CC Kao, YC Peng, HH Yao, JY Tsai, YH Chang, JT Chu, HW Huang, ...
Applied Physics Letters 87 (8), 2005
922005
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
HW Huang, CC Kao, TH Hsueh, CC Yu, CF Lin, JT Chu, HC Kuo, ...
Materials Science and Engineering: B 113 (2), 125-129, 2004
842004
Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off
CF Chu, CC Yu, HC Cheng, CF Lin, SC Wang
Japanese journal of applied physics 42 (2B), L147, 2003
842003
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
CF Lin, GC Chi, MS Feng, JD Guo, JS Tsang, JM Hong
Applied physics letters 68 (26), 3758-3760, 1996
821996
High-efficiency InGaN-based light-emitting diodes with nanoporous GaN: Mg structure
CF Lin, JH Zheng, ZJ Yang, JJ Dai, DY Lin, CY Chang, ZX Lai, CS Hong
Applied physics letters 88 (8), 2006
802006
Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates
RH Horng, WK Wang, SC Huang, SY Huang, SH Lin, CF Lin, DS Wuu
Journal of crystal growth 298, 219-222, 2007
782007
Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
CC Yu, CF Chu, JY Tsai, HW Huang, TH Hsueh, CF Lin, SC Wang
Japanese journal of applied physics 41 (8B), L910, 2002
742002
Illumination apparatus with laser emitting diode
WH Chen, H Huang, K Chang, CF Lin
US Patent App. 10/760,416, 2005
612005
Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography
HW Huang, CH Lin, JK Huang, KY Lee, CF Lin, CC Yu, JY Tsai, R Hsueh, ...
Materials Science and Engineering: B 164 (2), 76-79, 2009
572009
85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
TY Wang, CT Tasi, CF Lin, DS Wuu
Scientific Reports 7 (1), 14422, 2017
542017
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
CC Kao, HW Huang, JY Tsai, CC Yu, CF Lin, HC Kuo, SC Wang
Materials Science and Engineering: B 107 (3), 283-288, 2004
532004
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
HH Yao, CF Lin, HC Kuo, SC Wang
Journal of crystal growth 262 (1-4), 151-156, 2004
492004
InGaN light-emitting diodes with an embedded nanoporous GaN distributed Bragg reflectors
GY Shiu, KT Chen, FH Fan, KP Huang, WJ Hsu, JJ Dai, CF Lai, CF Lin
Scientific Reports 6 (1), 29138, 2016
472016
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