| Semiconductor device and manufacturing method thereof WY Lo, TW Cheng, CL Chan, MT Lin US Patent App. 15/161,139, 2016 | 164* | 2016 |
| The influence of ion beam rastering on the swelling of self-ion irradiated pure iron at 450 C JG Gigax, E Aydogan, T Chen, D Chen, L Shao, Y Wu, WY Lo, Y Yang, ... Journal of Nuclear Materials 465, 343-348, 2015 | 107 | 2015 |
| Irradiation response of delta ferrite in as-cast and thermally aged cast stainless steel Z Li, WY Lo, Y Chen, J Pakarinen, Y Wu, T Allen, Y Yang Journal of Nuclear Materials 466, 201-207, 2015 | 44 | 2015 |
| Effect of self-ion irradiation on the microstructural changes of alloy EK-181 in annealed and severely deformed conditions E Aydogan, T Chen, JG Gigax, D Chen, X Wang, PS Dzhumaev, ... Journal of Nuclear Materials 487, 96-104, 2017 | 42 | 2017 |
| Stoichiometry effect on the irradiation response in the microstructure of zirconium carbides Y Yang, WY Lo, C Dickerson, TR Allen Journal of Nuclear Materials 454 (1-3), 130-135, 2014 | 30 | 2014 |
| Vanadium diffusion coating on HT-9 cladding for mitigating the fuel cladding chemical interactions WY Lo, Y Yang Journal of Nuclear Materials 451 (1-3), 137-142, 2014 | 20 | 2014 |
| FinFETs and methods of forming FinFETs T Cheng, LO Wei-Yang, CS Chen US Patent 10,163,898, 2018 | 17 | 2018 |
| Effects of Cr on the interdiffusion between Ce and Fe–Cr alloys WY Lo, N Silva, Y Wu, R Winmann-Smith, Y Yang Journal of Nuclear Materials 458, 264-271, 2015 | 12 | 2015 |
| FinFET device with asymmetrical drain/source feature LO Wei-Yang, T Cheng US Patent 10,665,719, 2020 | 6 | 2020 |
| Vanadium carbide by MOCVD for mitigating the fuel cladding chemical interaction S Huang, WY Lo, Y Yang Fusion Engineering and Design 125, 556-561, 2017 | 6 | 2017 |
| FinFETs and methods of forming finFETs T Cheng, CS Chen, LO Wei-Yang US Patent 10,868,005, 2020 | 4 | 2020 |
| Tight-binding calculation with up to the 3rd nearest neighbor coupling for small-radius carbon nanotubes WY Lo, GYS Wu, KC Wu Physica E: Low-dimensional Systems and Nanostructures 43 (1), 482-486, 2010 | 4 | 2010 |
| FinFETs and methods of forming FinFETs T Cheng, CS Chen, LO Wei-Yang US Patent 10,515,958, 2019 | 3 | 2019 |
| Semiconductor device having epitaxy structure WY Lo, SH Chen, MT Lin, TW Cheng US Patent 9,559,207, 2017 | 3 | 2017 |
| Method of manufacturing semiconductor device LO Wei-Yang, SH Chen, MT Lin, T Cheng US Patent 10,319,842, 2019 | 2 | 2019 |
| Method of manufacturing semiconductor device LO Wei-Yang, SH Chen, MT Lin, T Cheng US Patent 9,929,254, 2018 | 2 | 2018 |
| Method of manufacturing semiconductor device comprising doped gate spacer LO Wei-Yang, T Cheng, CL Chan, MT Lin US Patent 10,879,399, 2020 | 1 | 2020 |
| FinFET device with asymmetrical drain/source feature LO Wei-Yang, T Cheng US Patent 10,910,496, 2021 | | 2021 |
| Semiconductor device LO Wei-Yang, SH Chen, MT Lin, T Cheng US Patent 10,770,569, 2020 | | 2020 |
| Swelling Resistance of Several Variants of Ferritic Alloy EK-181 at High Doses During Self Ion Irradiation E Aydoğan Güngör, D Chen, J Gigax, X Wang, C Wei, L Shao, ... null, 2015 | | 2015 |
Yong YangAssociate Professor, Nuclear Engineering Program, University of FloridaVahvistettu sähköpostiosoite verkkotunnuksessa ufl.edu
