| Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV JW Palmour, L Cheng, V Pala, EV Brunt, DJ Lichtenwalner, GY Wang, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 320 | 2014 |
| 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems V Pala, EV Brunt, L Cheng, M O'Loughlin, J Richmond, A Burk, ST Allen, ... 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 449-454, 2014 | 159 | 2014 |
| Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors TP Chow, I Omura, M Higashiwaki, H Kawarada, V Pala IEEE Transactions on Electron Devices 64 (3), 856-873, 2017 | 153 | 2017 |
| 27 kV, 20 A 4H-SiC n-IGBTs E Van Brunt, L Cheng, MJ O'Loughlin, J Richmond, V Pala, JW Palmour, ... Materials Science Forum 821, 847-850, 2015 | 134 | 2015 |
| New generation 10kV SiC power MOSFET and diodes for industrial applications JB Casady, V Pala, DJ Lichtenwalner, E Van Brunt, B Hull, GY Wang, ... Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 125 | 2015 |
| Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs B Hull, S Allen, Q Zhang, D Gajewski, V Pala, J Richmond, S Ryu, ... 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 139-142, 2014 | 93 | 2014 |
| 22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation EV Brunt, L Cheng, M O'Loughlin, C Capell, C Jonas, K Lam, J Richmond, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 92 | 2014 |
| Integrated high-frequency power converters based on GaAs pHEMT: Technology characterization and design examples V Pala, H Peng, P Wright, MM Hella, TP Chow IEEE Transactions on Power Electronics 27 (5), 2644-2656, 2011 | 69 | 2011 |
| Ultra high voltage MOS controlled 4H-SiC power switching devices S Ryu, C Capell, E Van Brunt, C Jonas, M O’Loughlin, J Clayton, K Lam, ... Semiconductor Science and Technology 30 (8), 084001, 2015 | 45 | 2015 |
| 27 kV 20 A 4H-SiC n-IGBTs EV Brunt, L Cheng, MJ O’Loughlin, J Richmond, V Pala, J Palmour, ... Mater. Sci. Forum 821, 847-850, 2015 | 45 | 2015 |
| Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling AV Suvorov, V Pala US Patent 9,768,259, 2017 | 39 | 2017 |
| Field effect transistor devices with buried well protection regions L Cheng, A Agarwal, V Pala, J Palmour US Patent 9,142,668, 2015 | 37 | 2015 |
| Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes V Pala, E Van Brunt, SH Ryu, B Hull, S Allen, J Palmour, A Hefner 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 32 | 2016 |
| Strategic overview of high-voltage SiC power device development aiming at global energy savings L Cheng, JW Palmour, AK Agarwal, ST Allen, EV Brunt, GY Wang, V Pala, ... Materials Science Forum 778, 1089-1095, 2014 | 31 | 2014 |
| Record-low 10mΩ SiC MOSFETs in TO-247, rated at 900V V Pala, G Wang, B Hull, S Allen, J Casady, J Palmour 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 979-982, 2016 | 28 | 2016 |
| Field effect device with enhanced gate dielectric structure DJ Lichtenwalner, AK Agarwal, L Cheng, V Pala, JW Palmour US Patent 9,111,919, 2015 | 26 | 2015 |
| Monolithically integrated vertical power transistor and bypass diode V Pala, L Cheng, AK Agarwal, JW Palmour, ER Van Brunt US Patent 10,868,169, 2020 | 24 | 2020 |
| High-mobility SiC MOSFETs with alkaline earth interface passivation DJ Lichtenwalner, V Pala, B Hull, S Allen, JW Palmour Materials Science Forum 858, 671-676, 2016 | 24 | 2016 |
| Avalanche breakdown design parameters in GaN Z Li, V Pala, TP Chow Japanese Journal of Applied Physics 52 (8S), 08JN05, 2013 | 22 | 2013 |
| 900V silicon carbide MOSFETs for breakthrough power supply design V Pala, A Barkley, B Hull, G Wang, SH Ryu, E Van Brunt, D Lichtenwalner, ... 2015 IEEE Energy Conversion Congress and Exposition (ECCE), 4145-4150, 2015 | 20 | 2015 |
