| 14nm FDSOI technology for high speed and energy efficient applications O Weber, E Josse, F Andrieu, A Cros, E Richard, P Perreau, E Baylac, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 115 | 2014 |
| FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration C Fenouillet-Beranger, B Previtali, P Batude, F Nemouchi, M Cassé, ... 2014 44th European Solid State Device Research Conference (ESSDERC), 110-113, 2014 | 48 | 2014 |
| Nickel silicide encroachment formation and characterization B Imbert, R Pantel, S Zoll, M Gregoire, R Beneyton, S Del Medico, ... Microelectronic engineering 87 (3), 245-248, 2010 | 46 | 2010 |
| Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor F Panciera, K Hoummada, M Gregoire, M Juhel, N Bicais, D Mangelinck Applied Physics Letters 99 (5), 2011 | 44 | 2011 |
| Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ... Scripta Materialia 78, 9-12, 2014 | 29 | 2014 |
| Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis F Panciera, K Hoummada, M Gregoire, M Juhel, F Lorut, N Bicais, ... Microelectronic engineering 107, 167-172, 2013 | 29 | 2013 |
| Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects S Chhun, LG Gosset, N Casanova, D Ney, D Delille, C Trouiller, ... Microelectronic engineering 82 (3-4), 587-593, 2005 | 28 | 2005 |
| 28nm FDSOI CMOS technology (FEOL and BEOL) thermal stability for 3D sequential integration: Yield and reliability analysis C Cavalcante, C Fenouillet-Beranger, P Batude, X Garros, X Federspiel, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 24 | 2020 |
| Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development S Courtas, M Grégoire, X Federspiel, N Bicaïs-Lepinay, C Wyon Microelectronics Reliability 46 (9-11), 1530-1535, 2006 | 22 | 2006 |
| Ni (Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation F Panciera, K Hoummada, C Perrin, M El Kousseifi, R Pantel, M Descoins, ... Microelectronic engineering 120, 34-40, 2014 | 20 | 2014 |
| Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold F Panciera, S Baudot, K Hoummada, M Gregoire, M Juhel, D Mangelinck Applied Physics Letters 100 (20), 2012 | 19 | 2012 |
| Pt redistribution in N-MOS transistors during Ni salicide process F Panciera, K Hoummada, M Gregoire, M Juhel, D Mangelinck Microelectronic engineering 107, 173-177, 2013 | 18 | 2013 |
| Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology C Fenouillet-Beranger, P Perreau, T Benoist, C Richier, S Haendler, ... 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 17 | 2012 |
| Kinetics study of NiPt (10 at.%)/Si0. 7Ge0. 3 solid state reactions E Bourjot, M Putero, C Perrin-Pellegrino, P Gergaud, M Gregoire, ... Microelectronic engineering 120, 163-167, 2014 | 12 | 2014 |
| Stresses in copper blanket films and damascene lines: Measurements and finite element analysis A Baldacci, C Rivero, P Gergaud, M Grégoire, O Sicardy, O Bostrom, ... Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004 | 11 | 2004 |
| Modeling of Fermi-level pinning alleviation with MIS contacts: N and pMOSFETs cointegration considerations—Part I J Borrel, L Hutin, O Rozeau, MA Jaud, S Martinie, M Gregoire, E Dubois, ... IEEE Transactions on Electron Devices 63 (9), 3413-3418, 2016 | 10 | 2016 |
| Nitrogen impurity effects on nickel silicide formation at low temperatures–New “nitrogen co-plasma” approach B Imbert, M Gregoire, S Zoll, R Beneyton, S Del-Medico, C Trouiller, ... Microelectronic engineering 85 (10), 2005-2008, 2008 | 10 | 2008 |
| Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature L Esposito, S Kerdiles, M Gregoire, P Benigni, K Dabertrand, JG Mattei, ... Journal of Applied Physics 128 (8), 2020 | 9 | 2020 |
| Gate shadowing effect on Ni (Pt) Si abnormal diffusion for sub-45 nm technologies M Gregoire, R Beneyton, S Del Medico, S Zoll Microelectronic engineering 88 (5), 548-552, 2011 | 9 | 2011 |
| On the influence of Ni (Pt) Si thin film formation on agglomeration threshold temperature and its impact on 3D imaging technology integration M Grégoire, FM Anak, S Verdier, K Dabertrand, S Guillemin, ... Microelectronic Engineering 271, 111937, 2023 | 8 | 2023 |
Federico PancieraC2N, CNRS/University of Paris-SaclayVahvistettu sähköpostiosoite verkkotunnuksessa c2n.upsaclay.fr
