Seuraa
Tsung-Ting Kao
Tsung-Ting Kao
Tuntematon yhteys
Vahvistettu sähköpostiosoite verkkotunnuksessa intel.com
Nimike
Viittaukset
Viittaukset
Vuosi
CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
TC Lu, CC Kao, HC Kuo, GS Huang, SC Wang
Applied Physics Letters 92 (14), 2008
3492008
GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN∕ GaN distributed Bragg reflector
TC Lu, SW Chen, LF Lin, TT Kao, CC Kao, P Yu, HC Kuo, SC Wang, ...
Applied Physics Letters 92 (1), 2008
1062008
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ...
Applied Physics Letters 102 (10), 2013
962013
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ...
Applied Physics Letters 105 (14), 2014
942014
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕ GaN and Ta2O5∕ SiO2 distributed Bragg reflector
CC Kao, YC Peng, HH Yao, JY Tsai, YH Chang, JT Chu, HW Huang, ...
Applied Physics Letters 87 (8), 2005
922005
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate
XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ...
Applied Physics Letters 106 (4), 2015
632015
Thermal characterization of gallium nitride pin diodes
J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ...
Applied Physics Letters 112 (7), 2018
582018
Optically pumped GaN-based vertical cavity surface emitting lasers: Technology and characteristics
SC Wang, TC Lu, CC Kao, JT Chu, GS Huang, HC Kuo, SW Chen, TT Kao, ...
Japanese Journal of Applied Physics 46 (8S), 5397, 2007
572007
Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition
XH Li, S Wang, H Xie, YO Wei, TT Kao, MM Satter, SC Shen, ...
physica status solidi (b) 252 (5), 1089-1095, 2015
552015
Effects of a step-graded AlxGa1− xN electron blocking layer in InGaN-based laser diodes
Y Zhang, TT Kao, J Liu, Z Lochner, SS Kim, JH Ryou, RD Dupuis, ...
Journal of Applied Physics 109 (8), 2011
492011
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
TT Kao, YS Liu, M Satter, XH Li, Z Lochner, P Douglas Yoder, ...
Applied Physics Letters 103 (21), 2013
462013
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ...
Journal of Crystal Growth 414, 76-80, 2015
402015
Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors
T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ...
Applied Physics Letters 110 (1), 2017
392017
Characteristics of GaN-based photonic crystal surface emitting lasers
T Lu, SW Chen, TT Kao, TW Liu
Applied Physics Letters 93 (11), 2008
372008
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5--SiO2 distributed Bragg reflectors
CC Kao, TC Lu, HW Huang, JT Chu, YC Peng, HH Yao, JY Tsai, TT Kao, ...
IEEE photonics technology letters 18 (7), 877-879, 2006
362006
Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector
YS Liu, AFMS Haq, K Mehta, TT Kao, S Wang, H Xie, SC Shen, PD Yoder, ...
Applied Physics Express 9 (11), 111002, 2016
342016
Working toward high-power GaN/InGaN heterojunction bipolar transistors
SC Shen, RD Dupuis, Z Lochner, YC Lee, TT Kao, Y Zhang, HJ Kim, ...
Semiconductor Science and Technology 28 (7), 074025, 2013
282013
GaN/InGaN avalanche phototransistors
SC Shen, TT Kao, HJ Kim, YC Lee, J Kim, MH Ji, JH Ryou, T Detchprohm, ...
Applied Physics Express 8 (3), 032101, 2015
262015
Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition
YS Liu, S Wang, H Xie, TT Kao, K Mehta, XJ Jia, SC Shen, PD Yoder, ...
Applied Physics Letters 109 (8), 2016
232016
Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
YS Liu, AFMS Haq, TT Kao, K Mehta, SC Shen, T Detchprohm, PD Yoder, ...
Journal of Crystal Growth 443, 81-84, 2016
232016
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Artikkelit 1–20