Seuraa
Cameron Hettler
Cameron Hettler
Electrical Engineer
Vahvistettu sähköpostiosoite verkkotunnuksessa ieee.org
Nimike
Viittaukset
Viittaukset
Vuosi
Design and evaluation of a compact silicon carbide photoconductive semiconductor switch
C James, C Hettler, J Dickens
IEEE Transactions on Electron Devices 58 (2), 508-511, 2010
502010
Characterization of annealed HPSI 4H-SiC for photoconductive semiconductor switches
C Hettler, WW Sullivan III, J Dickens
Materials Science Forum 717, 301-304, 2012
162012
High voltage photoconductive switches using semi-insulating, vanadium doped 6H-SiC
C James, C Hettler, J Dickens
2009 IEEE Pulsed Power Conference, 283-286, 2009
152009
A compact 45 kV curve tracer with picoampere current measurement capability
WW Sullivan, D Mauch, A Bullick, C Hettler, A Neuber, J Dickens
Review of Scientific Instruments 84 (3), 2013
142013
Carrier lifetime studies of semi-insulating silicon carbide for photoconductive switch applications
C Hettler, C James, J Dickens, A Neuber
2010 IEEE International Power Modulator and High Voltage Conference, 34-37, 2010
142010
Characterization of an n-type 4-kV GTO for pulsed power applications
T Flack, C Hettler, S Bayne
IEEE Transactions on Plasma Science 44 (10), 1947-1955, 2016
122016
Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications
C Hettler, WW Sullivan, J Dickens, A Neuber
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2012
122012
High-purity semi-insulating 4H-SiC as a high-voltage switch material
C James, C Hettler, J Dickens
2010 IEEE International Power Modulator and High Voltage Conference, 282-284, 2010
92010
Compact silicon carbide switch for high voltage operation
C James, C Hettler, J Dickens, A Neuber
2008 IEEE International Power Modulators and High-Voltage Conference, 17-20, 2008
82008
Shallow incorporation of nitrogen in HPSI 4H-SiC through the laser enhanced diffusion process
WW Sullivan III, C Hettler, J Dickens
Materials Science Forum 717, 813-816, 2012
62012
Investigation and evaluation of high voltage silicon carbide photoconductive semiconductor switches
C Hettler
MS thesis, Texas Tech University, Lubbock, TX, USA, 2009
62009
Evaluation of a pulsed ultraviolet light-emitting diode for triggering photoconductive semiconductor switches
D Mauch, C Hettler, WW Sullivan, AA Neuber, J Dickens
IEEE Transactions on Plasma Science 43 (7), 2182-2186, 2015
52015
Development of the dielectric wall accelerator
A Zografos, C Hettler, Y Parker, M Moyers, D Pearson, V Joshkin, K Leung, ...
Proc. IPAC13, 2013
42013
The effects of sub-contact nitrogen doping on silicon carbide photoconductive semiconductor switches
W Sullivan, C Hettler, J Dickens
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2012
42012
Recombination lifetime modification in bulk, semi-insulating 4H-SiC photoconductive switches
C Hettler, W Sullivan, J Dickens
2011 IEEE Pulsed Power Conference, 1105-1107, 2011
42011
Investigations Into 25- and 30--Thick Glass Capacitors at 23 °C and 235 °C and Area Dependence of Dielectric Strength of Alkali-Free Schott Inc. AF 32 ECO Glass
ND Zameroski, K Spendier, D Kerwin, M Spencer, JM Parson, C Hettler
IEEE Transactions on Plasma Science 44 (6), 973-979, 2016
32016
Dual Polarity Transmission Line
C Hettler
US Patent App. 13/798,993, 2014
32014
Laser enhanced diffusion of nitrogen in high purity semi-insulating 4H silicon carbide substrates for non-rectifying contact formation to photoconductive semiconductor switches
W Sullivan, C Hettler, J Dickens
2011 IEEE Pulsed Power Conference, 1099-1101, 2011
32011
High electric field packaging of silicon carbide photoconductive switches
C Hettler, C James, J Dickens
2009 IEEE Pulsed Power Conference, 631-634, 2009
32009
DI/DT evaluation of a SI N-type GTO designed for pulsed power applications
T Flack, C Hettler, S Bayne
2015 IEEE Pulsed Power Conference (PPC), 1-3, 2015
22015
Järjestelmä ei voi suorittaa toimenpidettä nyt. Yritä myöhemmin uudelleen.
Artikkelit 1–20