Seuraa
Elaheh Ahmadi
Elaheh Ahmadi
Associate Professor, University of California Los Angeles
Vahvistettu sähköpostiosoite verkkotunnuksessa umich.edu - Kotisivu
Nimike
Viittaukset
Viittaukset
Vuosi
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 062101, 2018
2642018
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
E Ahmadi, OS Koksaldi, SW Kaun, Y Oshima, DB Short, UK Mishra, ...
Applied Physics Express 10 (4), 041102, 2017
2642017
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
2452013
Demonstration of β-(Al x Ga1− x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
E Ahmadi, OS Koksaldi, X Zheng, T Mates, Y Oshima, UK Mishra, ...
Applied Physics Express 10 (7), 071101, 2017
2382017
Materials issues and devices of α- and β-Ga2O3
E Ahmadi, Y Oshima
Journal of Applied Physics 126 (16), 160901, 2019
2272019
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
2042017
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs
B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ...
IEEE Transactions on Electron Devices 65 (1), 45-50, 2017
2022017
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel
Journal of Applied Physics 123 (16), 161410, 2018
1192018
Composition determination of β-(Al x Ga1− x) 2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction
Y Oshima, E Ahmadi, SC Badescu, F Wu, JS Speck
Applied Physics Express 9 (6), 061102, 2016
1162016
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ...
IEEE Electron Device Letters 38 (3), 359-362, 2017
1132017
Chlorine-based dry etching of β-Ga2O3
JE Hogan, SW Kaun, E Ahmadi, Y Oshima, JS Speck
Semiconductor Science and Technology 31 (6), 065006, 2016
1132016
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (3), 349-352, 2020
1002020
n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
SH Han, A Mauze, E Ahmadi, T Mates, Y Oshima, JS Speck
Semiconductor Science and Technology 33 (4), 045001, 2018
762018
Schottky barrier height of Ni to β-(AlxGa1− x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy
E Ahmadi, Y Oshima, F Wu, JS Speck
Semiconductor Science and Technology 32 (3), 035004, 2017
682017
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
A Mauze, Y Zhang, T Itoh, E Ahmadi, JS Speck
Applied Physics Letters 117 (22), 222102, 2020
652020
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
SW Kaun, E Ahmadi, B Mazumder, F Wu, ECH Kyle, PG Burke, UK Mishra, ...
Semiconductor Science and Technology 29 (4), 045011, 2014
622014
Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes
ZA Jian, S Mohanty, E Ahmadi
Applied Physics Letters 116 (15), 2020
592020
Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
Y Oshima, E Ahmadi, S Kaun, F Wu, JS Speck
Semiconductor Science and Technology 33 (1), 015013, 2017
592017
An epitaxial ferroelectric ScAlN/GaN heterostructure memory
D Wang, P Wang, S Mondal, S Mohanty, T Ma, E Ahmadi, Z Mi
Advanced Electronic Materials 8 (9), 2200005, 2022
552022
Dispersion free 450-V p GaN-Gated CAVETs with Mg-ion implanted blocking layer
S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ...
IEEE Electron Device Letters 38 (7), 933-936, 2017
512017
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Artikkelit 1–20