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Shyh-Chiang Shen
Shyh-Chiang Shen
Professor, Electrical and Computer Engineering, Georgia Institute of Technology
Verified email at ece.gatech.edu
Title
Cited by
Cited by
Year
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ...
Applied physics letters 89 (1), 2006
1412006
Device technologies for RF front-end circuits in next-generation wireless communications
M Feng, SC Shen, DC Caruth, JJ Huang
Proceedings of the IEEE 92 (2), 354-375, 2004
1362004
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications
JJ Huang, HC Kuo, SC Shen
Woodhead Publishing, 2017
1102017
Low actuation voltage microelectromechanical device and method of manufacture
M Feng, SC Shen
US Patent 6,143,997, 2000
1052000
Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD
SC Shen, Y Zhang, D Yoo, JB Limb, JH Ryou, PD Yoder, RD Dupuis
IEEE Photonics Technology Letters 19 (21), 1744-1746, 2007
992007
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ...
Applied Physics Letters 102 (10), 2013
962013
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ...
Applied Physics Letters 105 (14), 2014
942014
Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz
SC Shen, M Feng
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
931999
Low-noise GaN ultraviolet pin photodiodes on GaN substrates
Y Zhang, SC Shen, HJ Kim, S Choi, JH Ryou, RD Dupuis, B Narayan
Applied Physics Letters 94 (22), 2009
912009
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate
XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ...
Applied Physics Letters 106 (4), 2015
632015
Electromagnetic energy controlled low actuation voltage microelectromechanical switch
M Feng, SC Shen
US Patent 6,717,496, 2004
622004
Thermal characterization of gallium nitride pin diodes
J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ...
Applied Physics Letters 112 (7), 2018
582018
Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition
XH Li, S Wang, H Xie, YO Wei, TT Kao, MM Satter, SC Shen, ...
physica status solidi (b) 252 (5), 1089-1095, 2015
552015
High performance GaN pin rectifiers grown on free-standing GaN substrates
JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis
Electronics Letters 42 (22), 1313-1314, 2006
502006
Effects of a step-graded AlxGa1− xN electron blocking layer in InGaN-based laser diodes
Y Zhang, TT Kao, J Liu, Z Lochner, SS Kim, JH Ryou, RD Dupuis, ...
Journal of Applied Physics 109 (8), 2011
492011
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
TT Kao, YS Liu, M Satter, XH Li, Z Lochner, P Douglas Yoder, ...
Applied Physics Letters 103 (21), 2013
462013
Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers
MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder
IEEE Journal of Quantum Electronics 48 (5), 703-711, 2012
442012
Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
RD Dupuis, JH Ryou, SC Shen, PD Yoder, Y Zhang, HJ Kim, S Choi, ...
Journal of Crystal Growth 310 (23), 5217-5222, 2008
422008
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ...
Journal of Crystal Growth 414, 76-80, 2015
402015
Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors
T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ...
Applied Physics Letters 110 (1), 2017
392017
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