Shyh-Chiang Shen
Shyh-Chiang Shen
Professor, Electrical and Computer Engineering, Georgia Institute of Technology
Verified email at ece.gatech.edu
Title
Cited by
Cited by
Year
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ...
Applied physics letters 89 (1), 011112, 2006
1352006
Device technologies for RF front-end circuits in next-generation wireless communications
M Feng, SC Shen, DC Caruth, JJ Huang
Proceedings of the IEEE 92 (2), 354-375, 2004
1292004
Low actuation voltage microelectromechanical device and method of manufacture
M Feng, SC Shen
US Patent 6,143,997, 2000
1052000
Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD
SC Shen, Y Zhang, D Yoo, JB Limb, JH Ryou, PD Yoder, RD Dupuis
IEEE Photonics Technology Letters 19 (21), 1744-1746, 2007
882007
Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz
SC Shen, M Feng
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
861999
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, TT Kao, YS Liu, XH Li, M Mahbub Satter, SC Shen, ...
Applied Physics Letters 102 (10), 101110, 2013
812013
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ...
Applied Physics Letters 105 (14), 141106, 2014
792014
Low-noise GaN ultraviolet photodiodes on GaN substrates
Y Zhang, SC Shen, HJ Kim, S Choi, JH Ryou, RD Dupuis, B Narayan
Applied Physics Letters 94 (22), 221109, 2009
752009
Electromagnetic energy controlled low actuation voltage microelectromechanical switch
M Feng, SC Shen
US Patent 6,717,496, 2004
622004
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate
XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ...
Applied Physics Letters 106 (4), 041115, 2015
562015
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications
JJ Huang, HC Kuo, SC Shen
Woodhead Publishing, 2017
542017
High performance GaN pin rectifiers grown on free-standing GaN substrates
JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis
Electronics Letters 42 (22), 1313-1314, 2006
442006
Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition
XH Li, S Wang, H Xie, YO Wei, TT Kao, MM Satter, SC Shen, ...
physica status solidi (b) 252 (5), 1089-1095, 2015
422015
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
TT Kao, YS Liu, M Mahbub Satter, XH Li, Z Lochner, P Douglas Yoder, ...
Applied Physics Letters 103 (21), 211103, 2013
422013
Effects of a step-graded AlxGa1−xN electron blocking layer in InGaN-based laser diodes
Y Zhang, TT Kao, J Liu, Z Lochner, SS Kim, JH Ryou, RD Dupuis, ...
Journal of Applied Physics 109 (8), 083115, 2011
402011
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ...
Journal of Crystal Growth 414, 76-80, 2015
392015
Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers
MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder
IEEE Journal of Quantum Electronics 48 (5), 703-711, 2012
392012
Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates
S Choi, HJ Kim, Y Zhang, X Bai, D Yoo, J Limb, JH Ryou, SC Shen, ...
IEEE Photonics Technology Letters 21 (20), 1526-1528, 2009
382009
Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
RD Dupuis, JH Ryou, SC Shen, PD Yoder, Y Zhang, HJ Kim, S Choi, ...
Journal of Crystal Growth 310 (23), 5217-5222, 2008
382008
Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz
MD Hampson, SC Shen, RS Schwindt, RK Price, U Chowdhury, ...
IEEE Electron Device Letters 25 (5), 238-240, 2004
382004
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