Ben Kaczer
Ben Kaczer
Vahvistettu sähköpostiosoite verkkotunnuksessa imec.be
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Viittaukset
Viittaukset
Vuosi
The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
4322011
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
3252010
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer
2010 IEEE International Reliability Physics Symposium, 16-25, 2010
3112010
A two-stage model for negative bias temperature instability
T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel
2009 IEEE international reliability physics symposium, 33-44, 2009
2542009
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
2452008
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
2332009
Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ...
IEEE Transactions on Electron Devices 49 (3), 500-506, 2002
2272002
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification
B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
1922005
Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction
R Degraeve, B Kaczer, G Groeseneken
Microelectronics Reliability 39 (10), 1445-1460, 1999
1851999
The universality of NBTI relaxation and its implications for modeling and characterization
T Grasser, W Gos, V Sverdlov, B Kaczer
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
1842007
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
1832011
Emerging yield and reliability challenges in nanometer CMOS technologies
G Gielen, P De Wit, E Maricau, J Loeckx, J Martin-Martinez, B Kaczer, ...
Proceedings of the conference on Design, automation and test in Europe, 1322 …, 2008
1672008
Atomistic approach to variability of bias-temperature instability in circuit simulations
B Kaczer, S Mahato, VV de Almeida Camargo, M Toledano-Luque, ...
2011 International Reliability Physics Symposium, XT. 3.1-XT. 3.5, 2011
1592011
AC NBTI studied in the 1 Hz--2 GHz range on dedicated on-chip CMOS circuits
R Fernandez, B Kaczer, A Nackaerts, S Demuynck, R Rodriguez, M Nafria, ...
2006 International Electron Devices Meeting, 1-4, 2006
1592006
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
T Grasser, H Reisinger, PJ Wagner, B Kaczer
Physical Review B 82 (24), 245318, 2010
1522010
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
T Grasser, B Kaczer, P Hehenberger, W Gos, R O'connor, H Reisinger, ...
2007 IEEE International Electron Devices Meeting, 801-804, 2007
1382007
High performance Ge pMOS devices using a Si-compatible process flow
P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
1372006
Defects in microelectronic materials and devices
DM Fleetwood, RD Schrimpf
CRC press, 2008
1332008
Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices—Application to NBTI
B Kaczer, PJ Roussel, T Grasser, G Groeseneken
IEEE Electron Device Letters 31 (5), 411-413, 2010
1312010
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1312009
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Artikkelit 1–20