Seuraa
Reza Ghandi
Reza Ghandi
Principal Engineer at GE Research
Vahvistettu sähköpostiosoite verkkotunnuksessa ge.com
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Viittaukset
Vuosi
SiC power devices—Present status, applications and future perspective
M Östling, R Ghandi, CM Zetterling
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
2522011
Ohmic contact properties of magnetron sputtered Ti3SiC2 on n-and p-type 4H-silicon carbide
K Buchholt, R Ghandi, M Domeij, CM Zetterling, J Lu, P Eklund, L Hultman, ...
Applied physics letters 98 (4), 2011
922011
High-voltage 4H-SiC PiN diodes with etched junction termination extension
R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling
IEEE Electron Device Letters 30 (11), 1170-1172, 2009
822009
Surface-passivation effects on the performance of 4H-SiC BJTs
R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ...
IEEE Transactions on Electron Devices 58 (1), 259-265, 2010
812010
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 57 (3), 704-711, 2010
762010
Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC
L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012
672012
Fabrication of 2700-V 12- Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50
R Ghandi, HS Lee, M Domeij, B Buono, CM Zetterling, M Ostling
IEEE Electron Device Letters 29 (10), 1135-1137, 2008
532008
Silicon carbide integrated circuits for extreme environments
AS Kashyap, CP Chen, R Ghandi, A Patil, E Andarawis, L Yin, ...
The 1st IEEE workshop on wide bandgap power devices and applications, 60-63, 2013
442013
Silicon carbide integrated circuits with stable operation over a wide temperature range
R Ghandi, CP Chen, L Yin, X Zhu, L Yu, S Arthur, F Ahmad, P Sandvik
IEEE Electron Device Letters 35 (12), 1206-1208, 2014
422014
High-voltage (2.8 kV) implantation-free 4H-SiC BJTs with long-term stability of the current gain
R Ghandi, B Buono, M Domeij, CM Zetterling, M Ostling
IEEE transactions on electron devices 58 (8), 2665-2669, 2011
422011
Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors
J Hållstedt, M Kolahdouz, R Ghandi, HH Radamson, R Wise
Journal of Applied Physics 103 (5), 2008
372008
SiC MOSFET design considerations for reliable high voltage operation
PA Losee, A Bolotnikov, LC Yu, G Dunne, D Esler, J Erlbaum, B Rowden, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 2A-2.1-2A-2.8, 2017
362017
Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Östling
IEEE transactions on electron devices 57 (10), 2664-2670, 2010
362010
High-current-gain SiC BJTs with regrown extrinsic base and etched JTE
HS Lee, M Domeij, R Ghandi, CM Zetterling, M Ostling
IEEE transactions on electron devices 55 (8), 1894-1898, 2008
302008
Modeling and characterization of the on-resistance in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE transactions on electron devices 58 (7), 2081-2087, 2011
242011
Kinetic model of SiGe selective epitaxial growth using RPCVD technique
M Kolahdouz, L Maresca, R Ghandi, A Khatibi, HH Radamson
Journal of The Electrochemical Society 158 (4), H457, 2011
242011
Future high temperature applications for SiC integrated circuits
CM Zetterling, L Lanni, R Ghandi, BG Malm, M Östling
physica status solidi c 9 (7), 1647-1650, 2012
212012
4.5 kV SiC charge-balanced MOSFETs with ultra-low on-resistance
R Ghandi, A Bolotnikov, S Kennerly, C Hitchcock, P Tang, TP Chow
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
202020
SiC charge-balanced devices offering breakthrough performance surpassing the 1-D Ron versus BV limit
A Bolotnikov, PA Losee, R Ghandi, S Kennerly, R Datta, X She
Materials Science Forum 963, 655-659, 2019
192019
1200 V 4H-SiC BJTs with a common emitter current gain of 60 and low on-resistance
HS Lee, M Domeij, CM Zetterling, R Ghandi, M Östling, F Allerstam, ...
Materials Science Forum 600, 1151-1154, 2009
192009
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