SiC power devices—Present status, applications and future perspective M Östling, R Ghandi, CM Zetterling
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
275 2011 Ohmic contact properties of magnetron sputtered Ti3SiC2 on n-and p-type 4H-silicon carbide K Buchholt, R Ghandi, M Domeij, CM Zetterling, J Lu, P Eklund, L Hultman, ...
Applied physics letters 98 (4), 2011
99 2011 High-voltage 4H-SiC PiN diodes with etched junction termination extension R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling
IEEE Electron Device Letters 30 (11), 1170-1172, 2009
87 2009 Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ...
IEEE Transactions on Electron Devices 58 (1), 259-265, 2010
82 2010 Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 57 (3), 704-711, 2010
78 2010 Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012
68 2012 Fabrication of 2700-V 12- Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50 R Ghandi, HS Lee, M Domeij, B Buono, CM Zetterling, M Ostling
IEEE Electron Device Letters 29 (10), 1135-1137, 2008
54 2008 Silicon carbide integrated circuits for extreme environments AS Kashyap, CP Chen, R Ghandi, A Patil, E Andarawis, L Yin, ...
The 1st IEEE workshop on wide bandgap power devices and applications, 60-63, 2013
48 2013 Silicon carbide integrated circuits with stable operation over a wide temperature range R Ghandi, CP Chen, L Yin, X Zhu, L Yu, S Arthur, F Ahmad, P Sandvik
IEEE Electron Device Letters 35 (12), 1206-1208, 2014
44 2014 High-voltage (2.8 kV) implantation-free 4H-SiC BJTs with long-term stability of the current gain R Ghandi, B Buono, M Domeij, CM Zetterling, M Ostling
IEEE transactions on electron devices 58 (8), 2665-2669, 2011
43 2011 SiC MOSFET design considerations for reliable high voltage operation PA Losee, A Bolotnikov, LC Yu, G Dunne, D Esler, J Erlbaum, B Rowden, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 2A-2.1-2A-2.8, 2017
41 2017 Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors J Hållstedt, M Kolahdouz, R Ghandi, HH Radamson, R Wise
Journal of Applied Physics 103 (5), 2008
39 2008 Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Östling
IEEE transactions on electron devices 57 (10), 2664-2670, 2010
36 2010 4.5 kV SiC charge-balanced MOSFETs with ultra-low on-resistance R Ghandi, A Bolotnikov, S Kennerly, C Hitchcock, P Tang, TP Chow
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
31 2020 High-current-gain SiC BJTs with regrown extrinsic base and etched JTE HS Lee, M Domeij, R Ghandi, CM Zetterling, M Ostling
IEEE transactions on electron devices 55 (8), 1894-1898, 2008
30 2008 Future high temperature applications for SiC integrated circuits CM Zetterling, L Lanni, R Ghandi, BG Malm, M Östling
physica status solidi c 9 (7), 1647-1650, 2012
26 2012 3kV SiC charge-balanced diodes breaking unipolar limit R Ghandi, A Bolotnikov, D Lilienfeld, S Kennerly, R Ravisekhar
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
25 2019 Modeling and characterization of the on-resistance in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE transactions on electron devices 58 (7), 2081-2087, 2011
24 2011 Kinetic model of SiGe selective epitaxial growth using RPCVD technique M Kolahdouz, L Maresca, R Ghandi, A Khatibi, HH Radamson
Journal of The Electrochemical Society 158 (4), H457, 2011
24 2011 SiC charge-balanced devices offering breakthrough performance surpassing the 1-D Ron versus BV limit A Bolotnikov, PA Losee, R Ghandi, S Kennerly, R Datta, X She
Materials Science Forum 963, 655-659, 2019
23 2019