Veit Wagner
Veit Wagner
Professor of Physics, Jacobs University Bremen, Department of Physics & Earth Sciences
Verified email at - Homepage
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Unconventional face‐on texture and exceptional in‐plane order of a high mobility n‐type polymer
J Rivnay, MF Toney, Y Zheng, IV Kauvar, Z Chen, V Wagner, A Facchetti, ...
Advanced Materials 22 (39), 4359-4363, 2010
Bias-induced threshold voltages shifts in thin-film organic transistors
HL Gomes, P Stallinga, F Dinelli, M Murgia, F Biscarini, DM De Leeuw, ...
Applied Physics Letters 84 (16), 3184-3186, 2004
Emission of submillimeter electromagnetic waves by coherent phonons
T Dekorsy, H Auer, C Waschke, HJ Bakker, HG Roskos, H Kurz, V Wagner, ...
Physical review letters 74 (5), 738, 1995
In situ electrical characterization of DH4T field-effect transistors
T Muck, V Wagner, U Bass, M Leufgen, J Geurts, LW Molenkamp
Synthetic metals 146 (3), 317-320, 2004
Influence of the semiconductor thickness on the charge carrier mobility in P3HT organic field-effect transistors in top-gate architecture on flexible substrates
B Gburek, V Wagner
Organic electronics 11 (5), 814-819, 2010
Organic thin-film transistors fabricated by microcontact printing
M Leufgen, A Lebib, T Muck, U Bass, V Wagner, T Borzenko, G Schmidt, ...
Applied physics letters 84 (9), 1582-1584, 2004
On the origin of contact resistances of organic thin film transistors
M Marinkovic, D Belaineh, V Wagner, D Knipp
Advanced Materials 24 (29), 4005-4009, 2012
Electrical stability of pentacene thin film transistors
A Benor, A Hoppe, V Wagner, D Knipp
Organic Electronics 8 (6), 749-758, 2007
Megahertz operation of organic field-effect transistors based on poly (3-hexylthiopene)
V Wagner, P Wöbkenberg, A Hoppe, J Seekamp
Applied physics letters 89 (24), 243515, 2006
Lattice Dynamics and Bond Polarity of Be‐Chalcogenides A New Class of II–VI Materials
V Wagner, JJ Liang, R Kruse, S Gundel, M Keim, A Waag, J Geurts
physica status solidi (b) 215 (1), 87-91, 1999
Influence of impurities and structural properties on the device stability of pentacene thin film transistors
D Knipp, A Benor, V Wagner, T Muck
Journal of applied physics 101 (4), 044504, 2007
Ellipsometric studies of Be x Zn 1− x Se between 3 eV and 25 eV
K Wilmers, T Wethkamp, N Esser, C Cobet, W Richter, M Cardona, ...
Physical Review B 59 (15), 10071, 1999
Raman monitoring of semiconductor growth
V Wagner, D Drews, N Esser, DRT Zahn, J Geurts, W Richter
Journal of applied physics 75 (11), 7330-7333, 1994
Scaling limits of organic thin film transistors
A Hoppe, D Knipp, B Gburek, A Benor, M Marinkovic, V Wagner
Organic Electronics 11 (4), 626-631, 2010
Better bottom contact properties in organic field-effect transistors with ultrathin layers
T Muck, J Fritz, V Wagner
Applied Physics Letters 86 (23), 232101, 2005
Optimized sub-micron organic thin-film transistors: the influence of contacts and oxide thickness
M Leufgen, U Bass, T Muck, T Borzenko, G Schmidt, J Geurts, V Wagner, ...
Synthetic metals 146 (3), 341-345, 2004
Environmental stability and electronic transport of pentacene thin film transistors
D Knipp, T Muck, A Benor, V Wagner
Journal of non-crystalline solids 352 (9-20), 1774-1777, 2006
Microcontact printing and selective surface dewetting for large area electronic applications
A Benor, A Hoppe, V Wagner, D Knipp
Thin Solid Films 515 (19), 7679-7682, 2007
Molecular beam epitaxy of CdS/ZnSe heterostructures
S Petillon, A Dinger, M Grün, M Hetterich, V Kazukauskas, C Klingshirn, ...
Journal of crystal growth 201, 453-456, 1999
Lattice dynamics of CdS/ZnSe strained layer superlattices studied by Raman scattering
A Dinger, M Göppert, R Becker, M Grün, S Petillon, C Klingshirn, J Liang, ...
Physical Review B 64 (24), 245310, 2001
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