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Aravindh Kumar
Aravindh Kumar
Samsung Logic Pathfinding
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
Band Gap Tuning of CH3NH3Pb (Br1-xClx) 3 Hybrid Perovskite for Blue Electroluminescence
NK Kumawat, A Dey, A Kumar, S Gopinathan, KL Narasimhan, D Kabra
ACS Applied Materials & Interfaces, 2015
3802015
High-specific-power flexible transition metal dichalcogenide solar cells
K Nassiri Nazif, A Daus, J Hong, N Lee, S Vaziri, A Kumar, F Nitta, ...
nature Communications 12 (1), 7034, 2021
1002021
High-Performance p–n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation
K Nassiri Nazif, A Kumar, J Hong, N Lee, R Islam, CJ McClellan, O Karni, ...
Nano letters 21 (8), 3443-3450, 2021
412021
Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2
A Tang, A Kumar, M Jaikissoon, K Saraswat, HSP Wong, E Pop
ACS Applied Materials & Interfaces 13 (35), 41866-41874, 2021
282021
High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts
KH Kim, M Andreev, S Choi, J Shim, H Ahn, J Lynch, T Lee, J Lee, ...
ACS nano 16 (6), 8827-8836, 2022
272022
Sub-200 Ω· µm alloyed contacts to synthetic monolayer MoS2
A Kumar, K Schauble, KM Neilson, A Tang, P Ramesh, HSP Wong, E Pop, ...
2021 IEEE International Electron Devices Meeting (IEDM), 7.3. 1-7.3. 4, 2021
272021
Fast-response flexible temperature sensors with atomically thin molybdenum disulfide
A Daus, M Jaikissoon, AI Khan, A Kumar, RW Grady, KC Saraswat, E Pop
Nano Letters 22 (15), 6135-6140, 2022
192022
Doped WS2 transistors with large on-off ratio and high on-current
A Kumar, KN Nazif, P Ramesh, K Saraswat
2020 Device Research Conference (DRC), 1-2, 2020
102020
Towards high Voc, thin film, homojunction WS2 solar cells for energy harvesting applications
KN Nazif, A Kumar, MTM de Menezes, K Saraswat
Wide Bandgap Materials, Devices, and Applications IV 11126, 1112606, 2019
92019
On the limit of defect doping in transition metal oxides
A Kumar, R Islam, D Pramanik, K Saraswat
Journal of Vacuum Science & Technology A 37 (2), 2019
92019
Role of Halide Anion on Exciton Binding Energy and Disorder in Hybrid Perovskite Semiconductors
A Kumar, NK Kumawat, P Maheshwari, D Kabra
IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 2015
92015
Strong reduction in GE film reflectivity by an overlayer of 3 nm Si nanoparticles: Implications for photovoltaics
A Rezk, SA Hadi, JM Ashraf, A Alhammadi, W Alnaqbi, A Kumar, ...
ACS Applied Nano Materials 4 (5), 4602-4614, 2021
72021
Quantitative estimation of exciton quenching strength at interface of charge injection layers and organic semiconductor
A Kumar, A Dey, A Dhir, D Kabra
Organic Electronics, 2016
62016
First Demonstration of Dual-Gated Indium Tin Oxide Transistors with Record Drive Current ~2.3 mA/μm at L ≈ 60 nm and VDS = 1 V
S Wahid, A Daus, A Kumar, HSP Wong, E Pop
2022 International Electron Devices Meeting (IEDM), 12.5. 1-12.5. 4, 2022
52022
Improved Contacts to Synthetic Monolayer MoS2 – A Statistical Study
A Kumar, A Tang, HSP Wong, K Saraswat
2021 IEEE International Interconnect Technology Conference (IITC), 1-3, 2021
42021
Low Resistance III-V Hetero-contacts to N-Ge
J Suh, P Ramesh, AC Meng, A Kumar, A Kumar, S Gupta, R Islam, ...
arXiv preprint arXiv:2106.15099, 2021
32021
Statistical analysis of contacts to synthetic monolayer MoS2
A Kumar, A Tang, HSP Wong, K Saraswat
arXiv preprint arXiv:2106.08673, 2021
32021
Improving contacts and doping to two-dimensional transition metal dichalcogenides
A Kumar
Stanford University, 2022
12022
Contact engineering for graphene nanoribbon devices
Z Mutlu, C Dinh, GB Barin, PH Jacobse, A Kumar, D Polley, H Singh, ...
Applied Physics Reviews 10 (4), 2023
2023
Effect of Back-Gate Dielectric on Indium Tin Oxide (ITO) Transistor Performance and Stability
A Daus, L Hoang, C Gilardi, S Wahid, J Kwon, S Qin, JS Ko, M Islam, ...
IEEE Transactions on Electron Devices, 2023
2023
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