| Change of InAs/GaAs quantum dot shape and composition during capping H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi Journal of Applied Physics 104 (12), 2008 | 126 | 2008 |
| Reversed truncated cone composition distribution of quantum dots overgrown by an layer in a GaAs matrix A Lenz, R Timm, H Eisele, C Hennig, SK Becker, RL Sellin, UW Pohl, ... Applied Physics Letters 81 (27), 5150-5152, 2002 | 111 | 2002 |
| Electronic and structural differences between wurtzite and zinc blende InAs nanowire surfaces: experiment and theory M Hjort, S Lehmann, J Knutsson, AA Zakharov, YA Du, S Sakong, R Timm, ... ACS nano 8 (12), 12346-12355, 2014 | 95 | 2014 |
| Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2 R Timm, A Fian, M Hjort, C Thelander, E Lind, JN Andersen, ... Applied Physics Letters 97 (13), 2010 | 89 | 2010 |
| Self-organized formation of GaSb/GaAs quantum rings R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ... Physical review letters 101 (25), 256101, 2008 | 81 | 2008 |
| Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces M Hjort, S Lehmann, J Knutsson, R Timm, D Jacobsson, E Lundgren, ... Nano letters 13 (9), 4492-4498, 2013 | 79 | 2013 |
| Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning DB Suyatin, V Jain, VA Nebol’sin, J Trägårdh, ME Messing, JB Wagner, ... Nature Communications 5 (1), 3221, 2014 | 72 | 2014 |
| Structure and intermixing of GaSb∕ GaAs quantum dots R Timm, H Eisele, A Lenz, SK Becker, J Grabowski, TY Kim, ... Applied physics letters 85 (24), 5890-5892, 2004 | 71 | 2004 |
| Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering Z Yong, KM Persson, MS Ram, G D'Acunto, Y Liu, S Benter, J Pan, Z Li, ... Applied Surface Science 551, 149386, 2021 | 69 | 2021 |
| Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide R Timm, AR Head, S Yngman, JV Knutsson, M Hjort, SR McKibbin, ... Nature communications 9 (1), 1412, 2018 | 60 | 2018 |
| Quantum ring formation and antimony segregation in GaSb∕ GaAs nanostructures R Timm, A Lenz, H Eisele, L Ivanova, M Dähne, G Balakrishnan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 57 | 2008 |
| Nanovoids in InGaAs∕ GaAs quantum dots observed by cross-sectional scanning tunneling microscopy A Lenz, H Eisele, R Timm, SK Becker, RL Sellin, UW Pohl, D Bimberg, ... Applied physics letters 85 (17), 3848-3850, 2004 | 56 | 2004 |
| Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111) B substrates J Wu, E Lind, R Timm, M Hjort, A Mikkelsen, LE Wernersson Applied Physics Letters 100 (13), 2012 | 52 | 2012 |
| Local density of states and interface effects in semimetallic ErAs nanoparticles embedded in GaAs JK Kawasaki, R Timm, KT Delaney, E Lundgren, A Mikkelsen, ... Physical Review Letters 107 (3), 036806, 2011 | 52 | 2011 |
| InGaN platelets: synthesis and applications toward green and red light-emitting diodes Z Bi, F Lenrick, J Colvin, A Gustafsson, O Hultin, A Nowzari, T Lu, ... Nano Letters 19 (5), 2832-2839, 2019 | 47 | 2019 |
| Direct measurement and analysis of the conduction band density of states in diluted GaAs 1− x N x alloys L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, ... Physical Review B 82 (16), 161201, 2010 | 47 | 2010 |
| Electrical and surface properties of InAs/InSb nanowires cleaned by atomic hydrogen JL Webb, J Knutsson, M Hjort, S Gorji Ghalamestani, KA Dick, R Timm, ... Nano Letters 15 (8), 4865-4875, 2015 | 46 | 2015 |
| Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires M Hjort, J Wallentin, R Timm, AA Zakharov, U Hakanson, JN Andersen, ... ACS nano 6 (11), 9679-9689, 2012 | 46 | 2012 |
| Structure of InAs/GaAs quantum dots grown with Sb surfactant R Timm, H Eisele, A Lenz, TY Kim, F Streicher, K Pötschke, UW Pohl, ... Physica E: Low-Dimensional Systems and Nanostructures 32 (1-2), 25-28, 2006 | 44 | 2006 |
| Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a Ga As 1− x N x capping layer O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ... Physical Review B 71 (24), 245316, 2005 | 43 | 2005 |
Andrea LenzInstitut für Festkörperphysik, Technische Universität BerlinVerified email at physik.tu-berlin.de
