Mohammad Fallahnejad

Viittaukset

	Kaikki	2019 lähtien
Sitaatit	84	66
h-indeksi	6	5
i10-indeksi	5	2

20152016201720182019202020212022202320243 5 1 6 4 10 7 19 23 3

Muut kirjoittajat

mahdi vadizadehAssistant professor at IAU, Abhar branchVahvistettu sähköpostiosoite verkkotunnuksessa abhariau.ac.ir
Alireza KashaniniaAssistant Professor of Electrical Engineering, IA University, Central Tehran Branch (IAUCTB)Vahvistettu sähköpostiosoite verkkotunnuksessa iauctb.ac.ir
Alireza SalehiK.N.Toosi University of TechnologyVahvistettu sähköpostiosoite verkkotunnuksessa kntu.ac.ir
Amir KhodabakhshDepartment of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, IranVahvistettu sähköpostiosoite verkkotunnuksessa wtiau.ac.ir
Amir AminiAssociate Professor of Electronic Engineering,West Tehran Branch, Islamic Azad UniversityVahvistettu sähköpostiosoite verkkotunnuksessa wtiau.ac.ir
farhad razaghianAssistant Professor of Islamic Azad University, South Tehran BranchVahvistettu sähköpostiosoite verkkotunnuksessa azad.ac.ir

Seuraa

Mohammad Fallahnejad

Assistant Professor of Electronic Engineering,Central Tehran Branch, Islamic Azad University

Vahvistettu sähköpostiosoite verkkotunnuksessa iauctb.ac.ir

Semiconductor Device Physics RF device RF Circuit Design Low Noise Amplifier


Nimike Lajittele sitaattien mukaan Lajittele vuoden mukaan Lajittele otsikon mukaan	Viittaukset Viittaukset	Vuosi
Impact of channel doping engineering on the high-frequency noise performance of junctionless In0. 3Ga0. 7As/GaAs FET: a numerical simulation study M Fallahnejad, M Vadizadeh, A Salehi, A Kashaniniya, F Razaghian Physica E: Low-dimensional Systems and Nanostructures 115, 113715, 2020	18	2020
Performance enhancement of field effect transistor without doping junctions using InGaAs/GaAs for analog/RF applications M Fallahnejad, M Vadizadeh, A Salehi International Journal of Modern Physics B 33 (07), 1950050, 2019	10	2019
Design and simulation of low noise amplifier at 10 GHz by using GaAs High Electron Mobility transistor M Fallahnejad, Y Najmabadi, A Kashaniniya IOSR Journal of Electrical and Electronics Engineering 10 (5), 29-34, 2015	10	2015
Design and simulation noise characteristics of AlGaN/GaN HEMT on SIC substrate for low noise applications M Fallahnejad, A Kashaniniya, M Vadizadeh IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) 15, 31-37, 2015	10	2015
Design of Low Noise Amplifiers at 10 GHZ and 15 GHZ for Wireless Communication Systems M Fallahnejad, A Kashaniniya IOSR Journal of Electrical and Electronics Engineering 9 (5), 47-53, 2014	10	2014
Junctionless In0. 3Ga0. 7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications M Vadizadeh, M Fallahnejad, R Ejlali Journal of Computational Electronics 21 (5), 1127-1137, 2022	6	2022
Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure M Vadizadeh, M Fallahnejad, M Shaveisi, R Ejlali, F Bajelan Silicon 15 (2), 1093-1103, 2023	5	2023
High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si_0.5Ge_0.5 and asymmetric spacers with outstanding analog/RF parameters M Fallahnejad, A Amini, A Khodabakhsh, M Vadizadeh Applied Physics A 128 (1), 47, 2022	5	2022
Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaInAs/GaAs field-effect transistor M Vadizadeh, M Fallahnejad International Journal of Modern Physics B 35 (23), 2150238, 2021	5	2021
Low-noise Si/Si_0.5Ge_0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications M Fallahnejad, A Khodabakhsh, A Amini, M Vadizadeh Applied Physics A 129 (5), 336, 2023	2	2023
Design of a Low Noise Amplifier for 10 GHz Wireless Communication systems M Fallahnejad 6th Iranian conference on electrical and electronics engineering, 2014	2	2014
Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical … M Vadizadeh, M Fallahnejad, P Sotoodeh, R Ejlali, M Azadmanesh Materials Science and Engineering: B 292, 116445, 2023	1	2023
Enhancing the performance of an InAsSb/InAlSb-based pBn photodetector for early detection of a biomarker of bone marrow cancer: a proposed and simulated approach with extended … M Shaveisi, P Aliparast, M Fallahnejad Sensing and Imaging 25 (1), 22, 2024		2024
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance A Khodabakhsh, M Fallahnejad, M Vadizadeh Microelectronics Reliability 152, 115278, 2024		2024
Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications A Khodabakhsh, A Amini, M Fallahnejad IEEE Transactions on Nanotechnology, 2023		2023
High-sensitivity biosensor based on junctionless transistor using Si/Si 0.5 Ge0. 5 hybrid heterostructure: A potential device for SARS-CoV-2 sensing M Fallahnejad, M Shaveisi 2022 Iranian International Conference on Microelectronics (IICM), 43-47, 2022		2022
Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate Mahdi Vadizadeh, Mohammad Fallahnejad, Seyed Saleh Ghoreishi Iranian Journal of Electrical and Computer Engineering 18 (100884), 67-72, 2020		2020

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