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Erin Kyle
Erin Kyle
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High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck
Journal of applied physics 115 (19), 2014
1382014
Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs
J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
1152013
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
SW Kaun, PG Burke, M Hoi Wong, ECH Kyle, UK Mishra, JS Speck
Applied Physics Letters 101 (26), 2012
902012
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
SW Kaun, E Ahmadi, B Mazumder, F Wu, ECH Kyle, PG Burke, UK Mishra, ...
Semiconductor Science and Technology 29 (4), 045011, 2014
622014
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
562018
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs
R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...
IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016
532016
Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN
ECH Kyle, SW Kaun, EC Young, JS Speck
Applied Physics Letters 106 (22), 2015
442015
Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
SW Kaun, B Mazumder, MN Fireman, ECH Kyle, UK Mishra, JS Speck
Semiconductor Science and Technology 30 (5), 055010, 2015
412015
Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
Z Zhang, AR Arehart, ECH Kyle, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 106 (2), 2015
392015
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ...
Journal of Applied Physics 118 (15), 2015
342015
RF performance of proton-irradiated AlGaN/GaN HEMTs
J Chen, EX Zhang, CX Zhang, MW McCurdy, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2959-2964, 2014
342014
High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs
J Chen, YS Puzyrev, EX Zhang, DM Fleetwood, RD Schrimpf, AR Arehart, ...
IEEE Transactions on Device and Materials Reliability 16 (3), 282-289, 2016
332016
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ...
Journal of Applied Physics 119 (16), 2016
332016
Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
R Jiang, X Shen, J Chen, GX Duan, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 109 (2), 2016
282016
High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy
ECH Kyle, SW Kaun, F Wu, B Bonef, JS Speck
Journal of Crystal Growth 454, 164-172, 2016
122016
Band gap bowing for high In content InAlN films
RC Cramer, ECH Kyle, JS Speck
Journal of Applied Physics 126 (3), 2019
102019
Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs
R Jiang, EX Zhang, X Shen, J Chen, K Ni, P Wang, DM Fleetwood, ...
2016 16th European Conference on Radiation and Its Effects on Components and …, 2016
72016
Growth development of III-nitrides for electronic devices by molecular beam epitaxy
ECH Kyle
University of California, Santa Barbara, 2016
12016
Erratum to “High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy”[J. Cryst. Growth 454 (2016) 164–172]
ECH Kyle, SW Kaun, F Wu, B Bonef, JS Speck
Journal of Crystal Growth 496, 80, 2018
2018
Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene …
J Chen, YS Puzyrev, EX Zhang, DM Fleetwood, RD Schrimpf, AR Arehart, ...
IEEE Transactions on Device and Materials Reliability 16 (4), 1, 2016
2016
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