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Jihang Lee
Jihang Lee
Verified email at umich.edu
Title
Cited by
Cited by
Year
Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects
X Zhu, J Lee, WD Lu
Advanced Materials, 2017
2172017
On‐demand reconfiguration of nanomaterials: when electronics meets ionics
J Lee, WD Lu
Advanced Materials 30 (1), 1702770, 2018
1392018
Experimental Demonstration of Feature Extraction and Dimensionality Reduction using Memristor Networks
S Choi, JH Shin, J Lee, P Sheridan, WD Lu
Nano Letters 17 (5), 3113–3118, 2017
1392017
A general memristor-based partial differential equation solver
MA Zidan, YJ Jeong, J Lee, B Chen, S Huang, MJ Kushner, WD Lu
Nature Electronic 1, 411-420, 2018
1332018
Tuning ionic transport in memristive devices by graphene with engineered nanopores
J Lee, C Du, K Sun, E Kioupakis, WD Lu
Acs Nano 10 (3), 3571-3579, 2016
1192016
Tuning resistive switching characteristics of tantalum oxide memristors through Si doping
S Kim, SH Choi, J Lee, WD Lu
ACS nano 8 (10), 10262-10269, 2014
1042014
K-means data clustering with memristor networks
YJ Jeong*, J Lee*, J Moon, JH Shin, WD Lu
Nano letters 18 (7), 4447–4453, 2018
862018
Oxide resistive memory with functionalized graphene as built‐in selector element
Y Yang, J Lee, S Lee, CH Liu, Z Zhong, W Lu
Advanced materials 26 (22), 3693-3699, 2014
712014
Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based RRAM
J Lee, W Schell, X Zhu, E Kioupakis, WD Lu
ACS applied materials & interfaces 11 (12), 11579-11586, 2019
522019
Retention failure analysis of metal-oxide based resistive memory
S Choi, J Lee, S Kim, WD Lu
Applied Physics Letters 105 (11), 113510, 2014
432014
Electronic and Optical Properties of Oxygen Vacancies in Amorphous Ta2O5 from First Principles
J Lee, WD Lu, E Kioupakis
Nanoscale 9, 1120-1127, 2017
392017
Electronic properties of tantalum pentoxide polymorphs from first-principles calculations
J Lee, W Lu, E Kioupakis
Applied Physics Letters 105 (20), 202108, 2014
312014
Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping
S Chae, J Lee, KA Mengle, JT Heron, E Kioupakis
Applied Physics Letters 114 (10), 102104, 2019
242019
Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model
SH Lee, J Moon, YJ Jeong, J Lee, X Li, H Wu, WD Lu
ACS Applied Electronic Materials 2 (3), 701-709, 2020
202020
Thermal conductivity of rutile germanium dioxide
S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ...
Applied Physics Letters 117 (10), 102106, 2020
142020
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ...
Applied Physics Letters 118 (26), 260501, 2021
92021
Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides
M Ahn, Y Park, SH Lee, S Chae, J Lee, JT Heron, E Kioupakis, WD Lu, ...
Advanced Electronic Materials 7 (5), 2001258, 2021
72021
Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based Memristors
J Lee, E Kioupakis, W Lu
Bulletin of the American Physical Society 62, 2017
2017
Oxygen vacancies in amorphous-Ta2O5 from first-principles calculations
J Lee, E Kioupakis, W Lu
APS March Meeting Abstracts, 2016
2016
Electronic and optical properties of tantalum pentoxide polymorphs from first principles calculations
J Lee, E Kioupakis, W Lu
APS Meeting Abstracts 1, 45011, 2014
2014
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Articles 1–20