| The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se SY Shin, JM Choi, J Seo, HW Ahn, YG Choi, B Cheong, S Lee Scientific reports 4 (1), 7099, 2014 | 58 | 2014 |
| Relaxation oscillator-realized artificial electronic neurons, their responses, and noise H Lim, HW Ahn, V Kornijcuk, G Kim, JY Seok, I Kim, CS Hwang, DS Jeong Nanoscale 8 (18), 9629-9640, 2016 | 50 | 2016 |
| Effect of Ge concentration in GexSe1− x chalcogenide glass on the electronic structures and the characteristics of ovonic threshold switching (OTS) devices SD Kim, HW Ahn, S yeol Shin, DS Jeong, SH Son, H Lee, B Cheong, ... ECS Solid State Letters 2 (10), Q75, 2013 | 47 | 2013 |
| ECS Solid State Lett. 2 SD Kim, HW Ahn, SY Shin, DS Jeong, SH Son, H Lee, BK Cheong, ... Q75, 2013 | 43 | 2013 |
| A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5 S Lee, DS Jeong, J Jeong, W Zhe, YW Park, HW Ahn, B Cheong Applied Physics Letters 96 (2), 2010 | 39 | 2010 |
| A study on the scalability of a selector device using threshold switching in Pt/GeSe/Pt HW Ahn, DS Jeong, B Cheong, S Kim, SY Shin, H Lim, D Kim, S Lee ECS Solid State Letters 2 (9), N31, 2013 | 37 | 2013 |
| Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films HW Ahn, D Seok Jeong, B Cheong, H Lee, H Lee, S Kim, SY Shin, D Kim, ... Applied Physics Letters 103 (4), 2013 | 34 | 2013 |
| Anomalous reduction of the switching voltage of Bi-doped Ge0. 5Se0. 5 ovonic threshold switching devices J Seo, HW Ahn, S Shin, B Cheong, S Lee Applied Physics Letters 104 (15), 2014 | 27 | 2014 |
| Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature Z Wu, S Lee, YW Park, HW Ahn, DS Jeong, J Jeong, K No, B Cheong Applied Physics Letters 96 (13), 2010 | 20 | 2010 |
| A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS) J Seo, SW Cho, HW Ahn, B Cheong, S Lee Journal of Alloys and Compounds 691, 880-883, 2017 | 16 | 2017 |
| Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials J Jeong, HW Ahn, S Lee, WM Kim, JG Ha, B Cheong Applied Physics Letters 94 (1), 2009 | 14 | 2009 |
| A study on the temperature dependence of characteristics of phase change memory devices S Lee, DS Jeong, J Jeong, W Zhe, YW Park, HW Ahn, WM Kim, B Cheong Applied Physics Letters 95 (9), 2009 | 9 | 2009 |
| Structure and magnetic anisotropy in L10 ordered FePd thin films JG Ha, IS Chung, JG Kang, HW An, JH Koh, SM Koo, YH Cho, SY Park, ... physica status solidi (a) 204 (12), 4045-4048, 2007 | 9 | 2007 |
| Numerical study on passive crossbar arrays employing threshold switches as cell-selection-devices DS Jeong, HW Ahn, SD Kim, M An, S Lee, B Cheong Electronic Materials Letters 8, 169-174, 2012 | 4 | 2012 |
| Characteristics of Phase Change Memory Devices based on Ge-doped SbTe and its derivative B Cheong, J Jeong, S Lee, IH Kim, W Zhe, HW Ahn, SC Kim, HS Lee, ... Proc. European Phase Change and Ovonics Symposium (E* PCOS), 2007 | 4 | 2007 |
| S.-d. Kim, S.-Y. Shin, H. Lim, D. Kim, S. Lee HW Ahn, DS Jeong, B Cheong ECS Solid State Lett 2, N31, 2013 | 3 | 2013 |
| The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe Y Park, HS Lee, HW Ahn, Z Wu, S Lee, J Jeong, DS Jeong, K Yi, ... Current Applied Physics 10 (1), e79-e82, 2010 | 3 | 2010 |
| Optical properties of amorphous Ge1−x Se x and Ge1−x−y Se x As y thin films … H Lee, HS So, H Lee, HY Shin, S Yoon, HW Ahn, SD Kim, S Lee, ... Journal of the Korean Physical Society 64, 1726-1736, 2014 | 1 | 2014 |
