| High-performance InAlN/GaN HEMTs on silicon substrate with high fT× Lg P Cui, A Mercante, G Lin, J Zhang, P Yao, DW Prather, Y Zeng Applied Physics Express 12 (10), 104001, 2019 | 46 | 2019 |
| InAlN/GaN HEMT on Si with fmax= 270 GHz P Cui, M Jia, H Chen, G Lin, J Zhang, L Gundlach, JQ Xiao, Y Zeng IEEE Transactions on Electron Devices 68 (3), 994-999, 2021 | 28 | 2021 |
| Ultrathin InGaO thin film transistors by atomic layer deposition J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin, DY Peide IEEE Electron Device Letters 44 (2), 273-276, 2022 | 20 | 2022 |
| High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric J Zhang, P Cui, G Lin, Y Zhang, MG Sales, M Jia, Z Li, C Goodwin, ... Applied Physics Express 12 (9), 096502, 2019 | 16 | 2019 |
| Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors P Cui, J Zhang, TY Yang, H Chen, H Zhao, G Lin, L Wei, JQ Xiao, ... Journal of Physics D: Applied Physics 53 (6), 065103, 2019 | 15 | 2019 |
| First demonstration of BEOL-compatible ultrathin atomiclayer-deposited InZnO transistors with GHz operation and record high bias-stress stability D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, ... 2022 International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2022 | 14 | 2022 |
| Sub-60 mV/decade switching via hot electron transfer in nanoscale GaN HEMTs P Cui, G Lin, J Zhang, Y Zeng IEEE Electron Device Letters 41 (8), 1185-1188, 2020 | 13 | 2020 |
| InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric P Cui, J Zhang, M Jia, G Lin, L Wei, H Zhao, L Gundlach, Y Zeng Japanese Journal of Applied Physics 59 (2), 020901, 2020 | 13 | 2020 |
| Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation J Zhang, M Jia, MG Sales, Y Zhao, G Lin, P Cui, C Santiwipharat, C Ni, ... ACS Applied Electronic Materials 3 (12), 5483-5495, 2021 | 12 | 2021 |
| Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, PY Liao, D Zemlyanov, ... Applied Physics Letters 121 (17), 2022 | 10 | 2022 |
| Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing J Zhang, G Lin, P Cui, M Jia, Z Li, L Gundlach, Y Zeng IEEE Transactions on Electron Devices 67 (6), 2346-2351, 2020 | 9 | 2020 |
| Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing J Zhang, MG Sales, G Lin, P Cui, P Pepin, JM Vohs, S Mcdonnell, Y Zeng IEEE Electron Device Letters 40 (9), 1463-1466, 2019 | 9 | 2019 |
| One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process J Zhang, Y Zhang, P Cui, G Lin, C Ni, Y Zeng IEEE Electron Device Letters 42 (4), 521-524, 2021 | 8 | 2021 |
| First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10 11, SS of … J Zhang, Z Zhang, Z Lin, K Xu, H Dou, B Yang, X Zhang, H Wang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 7 | 2023 |
| The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs P Cui, L Wei, G Lin, J Zhang, H Zhao, Y Zeng Journal of Physics D: Applied Physics 52 (46), 465104, 2019 | 7 | 2019 |
| Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, ... 2022 International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2022 | 6 | 2022 |
| Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer G Lin, MQ Zhao, M Jia, J Zhang, P Cui, L Wei, H Zhao, ATC Johnson, ... Journal of Physics D: Applied Physics 53 (10), 105103, 2019 | 6 | 2019 |
| Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition J Zhang, Z Lin, Z Zhang, K Xu, H Dou, B Yang, A Charnas, D Zheng, ... IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration PY Liao, D Zheng, S Alajlouni, Z Zhang, M Si, J Zhang, JY Lin, ... IEEE Transactions on Electron Devices 70 (4), 2052-2058, 2023 | 5 | 2023 |
| Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment G Lin, MQ Zhao, M Jia, P Cui, H Zhao, J Zhang, L Gundlach, X Liu, ... Journal of Physics D: Applied Physics 53 (41), 415106, 2020 | 5 | 2020 |
