Band alignment of ScAlN/GaN heterojunction H Fu, JC Goodrich, N Tansu Applied Physics Letters 117 (23), 2020 | 11 | 2020 |
Band anti-crossing model in dilute-As GaNAs alloys JC Goodrich, D Borovac, CK Tan, N Tansu Scientific Reports 9 (1), 5128, 2019 | 11 | 2019 |
Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes H Fu, JC Goodrich, O Ogidi-Ekoko, N Tansu Journal of Applied Physics 126 (13), 2019 | 9 | 2019 |
Electrical properties of MgO/GaN metal-oxide-semiconductor structures ON Ogidi-Ekoko, JC Goodrich, AJ Howzen, MR Peart, NC Strandwitz, ... Solid-State Electronics 172, 107881, 2020 | 8 | 2020 |
Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition JC Goodrich, TG Farinha, L Ju, AJ Howzen, A Kundu, ON Ogidi-Ekoko, ... Journal of Crystal Growth 536, 125568, 2020 | 8 | 2020 |
Gain characteristics of InGaN quantum wells with AlGaInN barriers H Fu, W Sun, O Ogidi-Ekoko, JC Goodrich, N Tansu AIP Advances 9 (4), 2019 | 5 | 2019 |
Power electronics figure-of-merit of ScAlN H Fu, JC Goodrich, O Ogidi-Ekoko, N Tansu Applied Physics Letters 119 (7), 2021 | 4 | 2021 |
Imaging of X-ray Pairs in a Spontaneous Parametric Down-Conversion Process JC Goodrich, R Mahon, J Hanrahan, M Dziubelski, RA Abrahao, ... arXiv preprint arXiv:2310.13078, 2023 | 1 | 2023 |
Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters W Sun, H Fu, D Borovac, JC Goodrich, CK Tan, N Tansu IEEE Journal of Quantum Electronics 58 (2), 1-6, 2022 | 1 | 2022 |
Prospects for hole doping in dilute-anion III-nitrides JC Goodrich, CK Tan, D Borovac, N Tansu Applied Physics Letters 118 (7), 2021 | 1 | 2021 |
Gain Properties of Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers H Fu, W Sun, JC Goodrich, D Borovac, CK Tan, N Tansu 2021 IEEE Photonics Conference (IPC), 1-2, 2021 | | 2021 |
Band structures and heterojunction alignment of ScAlN alloy H Fu, JC Goodrich, N Tansu Gallium Nitride Materials and Devices XVI 11686, 1168623, 2021 | | 2021 |
Efficient hole-doping in dilute-anion III-nitrides JC Goodrich, D Borovac, CK Tan, N Tansu Gallium Nitride Materials and Devices XVI 11686, 116861O, 2021 | | 2021 |
Dilute-As InGaNAs quantum wells for red-emitting laser active regions H Fu, W Sun, JC Goodrich, D Borovac, N Tansu Novel In-Plane Semiconductor Lasers XX 11705, 117050F, 2021 | | 2021 |
Dilute-Impurity III-Nitride Semiconductor Band Structure Modelling and Novel Oxide Dielectrics JC Goodrich Lehigh University, 2021 | | 2021 |
Band Alignment of Nearly Lattice-Matched ScAlN/GaN Heterojunction H Fu, JC Goodrich, N Tansu 2020 IEEE Photonics Conference (IPC), 1-2, 2020 | | 2020 |
p-type Doping of Dilute-Anion III-Nitride Materials JC Goodrich, D Borovac, CK Tan, N Tansu 2020 IEEE Photonics Conference (IPC), 1-2, 2020 | | 2020 |
Structural and electrical properties of MgO on GaN by thermal atomic layer deposition (Conference Presentation) J Goodrich, ON Ogidi-Ekoko, T Farinha, A Howzen, A Kundu, JJ Wierer, ... Oxide-based Materials and Devices XI 11281, 112811R, 2020 | | 2020 |
Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation) J Goodrich, H Fu, D Borovac, N Tansu Gallium Nitride Materials and Devices XV 11280, 1128005, 2020 | | 2020 |
InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation) H Fu, D Borovac, J Goodrich, O Ogidi-Ekoko, N Tansu Novel In-Plane Semiconductor Lasers XIX 11301, 1130103, 2020 | | 2020 |