Einar Örn Sveinbjörnsson
Einar Örn Sveinbjörnsson
Professor in Physics, University of Iceland
Vahvistettu sähköpostiosoite verkkotunnuksessa
Room temperature electroluminescence from dislocation‐rich silicon
EÖ Sveinbjörnsson, J Weber
Applied physics letters 69 (18), 2686-2688, 1996
Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps
E Pippel, J Woltersdorf, HÖ Ólafsson, EÖ Sveinbjörnsson
Journal of applied physics 97 (3), 2005
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C (V) characterization of metal-insulator-semiconductor …
M Fagerlind, F Allerstam, EÖ Sveinbjörnsson, N Rorsman, ...
Journal of Applied Physics 108 (1), 2010
Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC
TE Rudenko, IN Osiyuk, IP Tyagulski, HÖ Ólafsson, EÖ Sveinbjörnsson
Solid-state electronics 49 (4), 545-553, 2005
Electrical properties of platinum-hydrogen complexes in silicon
JU Sachse, EÖ Sveinbjörnsson, W Jost, J Weber, H Lemke
Physical Review B 55 (24), 16176, 1997
Fabrication and characterization of field-plated buried-gate SiC MESFETs
K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ...
IEEE electron device letters 27 (7), 573-575, 2006
A strong reduction in the density of near-interface traps at the SiO2∕ 4H‐SiC interface by sodium enhanced oxidation
F Allerstam, HÖ Ólafsson, G Gudjonsson, D Dochev, EÖ Sveinbjörnsson, ...
Journal of Applied Physics 101 (12), 2007
Reaction kinetics of hydrogen-gold complexes in silicon
EÖ Sveinbjörnsson, O Engström
Physical Review B 52 (7), 4884, 1995
High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
G Gudjonsson, HO Olafsson, F Allerstam, PA Nilsson, EO Sveinbjornsson, ...
IEEE electron device letters 26 (2), 96-98, 2005
1200-V 5.2-4H-SiC BJTs With a High Common-Emitter Current Gain
HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ...
IEEE Electron Device Letters 28 (11), 1007-1009, 2007
Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers
J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ...
IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018
Trap and inversion layer mobility characterization using Hall effect in silicon carbide-based MOSFETs with gate oxides grown by sodium enhanced oxidation
V Tilak, K Matocha, G Dunne, F Allerstam, EÖ Sveinbjornsson
IEEE Transactions on Electron Devices 56 (2), 162-169, 2009
Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots
O Engström, M Malmkvist, Y Fu, HÖ Ólafsson, EÖ Sveinbjörnsson
Applied physics letters 83 (17), 3578-3580, 2003
Hydrogen-atom number in platinum-hydrogen complexes in silicon
JU Sachse, J Weber, EÖ Sveinbjörnsson
Physical Review B 60 (3), 1474, 1999
Similarities in the electrical properties of transition metal–hydrogen complexes in silicon
JU Sachse, EÖ Sveinbjörnsson, N Yarykin, J Weber
Materials Science and Engineering: B 58 (1-2), 134-140, 1999
Phosphorus diffusion gettering of gold in silicon: The reversibility of the gettering process
EÖ Sveinbjörnsson, O Engström, U Södervall
Journal of applied physics 73 (11), 7311-7321, 1993
Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
RY Khosa, EB Thorsteinsson, M Winters, N Rorsman, R Karhu, J Hassan, ...
Aip Advances 8 (2), 2018
Novel hydrogen‐gold‐related deep acceptor in n‐type silicon
EÖ Sveinbjörnsson, O Engström
Applied physics letters 61 (19), 2323-2325, 1992
High field effect mobility in Si face 4H-SiC MOSFET transistors
HÖ Ólafsson, G Gudjonsson, PÅ Nilsson, EÖ Sveinbjörnsson, H Zirath, ...
Electronics Letters 40 (8), 1, 2004
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
M Dammann, W Pletschen, P Waltereit, W Bronner, R Quay, S Muller, ...
2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop], 25-44, 2008
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Artikkelit 1–20