Performance assessment of a novel vertical dielectrically modulated TFET-based biosensor M Verma, S Tirkey, S Yadav, D Sharma, DS Yadav IEEE Transactions on Electron Devices 64 (9), 3841-3848, 2017 | 151 | 2017 |
Analysis of a novel metal implant junctionless tunnel FET for better DC and analog/RF electrostatic parameters S Tirkey, D Sharma, DS Yadav, S Yadav IEEE Transactions on Electron Devices 64 (9), 3943-3950, 2017 | 74 | 2017 |
Performance improvement of nano wire TFET by hetero-dielectric and hetero-material: At device and circuit level J Patel, D Sharma, S Yadav, A Lemtur, P Suman Microelectronics Journal 85, 72-82, 2019 | 57 | 2019 |
A new structure of electrically doped TFET for improving electronic characteristics S Yadav, R Madhukar, D Sharma, M Aslam, D Soni, N Sharma Applied Physics A 124, 1-9, 2018 | 31 | 2018 |
A dielectric modulated biosensor for SARS-CoV-2 S Yadav, A Gedam, S Tirkey IEEE Sensors Journal 21 (13), 14483-14490, 2020 | 30 | 2020 |
A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour S Yadav, D Sharma, BV Chandan, M Aslam, D Soni, N Sharma Superlattices and Microstructures 117, 9-17, 2018 | 29 | 2018 |
Comparative analysis of full-gate and short-gate dielectric modulated electrically doped Tunnel-FET based biosensors D Sharma, D Singh, S Pandey, S Yadav, PN Kondekar Superlattices and Microstructures 111, 767-775, 2017 | 29 | 2017 |
Approach to suppress ambipolarity and improve RF and linearity performances on ED‐tunnel FET BV Chandan, S Dasari, S Yadav, D Sharma Micro & Nano Letters 13 (5), 684-689, 2018 | 28 | 2018 |
Impact of a metal-strip on a polarity-based electrically doped TFET for improvement of DC and analog/RF performance BV Chandan, M Gautami, K Nigam, D Sharma, VA Tikkiwal, S Yadav, ... Journal of Computational Electronics 18, 76-82, 2019 | 26 | 2019 |
Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high dielectric material in electrically doped TFET … S Yadav, D Sharma, D Soni, M Aslam Journal of Computational Electronics 16, 721-731, 2017 | 25 | 2017 |
Performance improvement of doped TFET by using plasma formation concept D Soni, D Sharma, S Yadav, M Aslam, N Sharma Superlattices and Microstructures 113, 97-109, 2018 | 23 | 2018 |
Impact of gate material engineering on ED‐TFET for improving DC/analogue‐RF/linearity performances BV Chandan, S Dasari, K Nigam, S Yadav, S Pandey, D Sharma Micro & Nano Letters 13 (12), 1653-1656, 2018 | 18 | 2018 |
Realization of junctionless TFET-based power efficient 6T SRAM memory cell for internet of things applications Anju, S Pandey, S Yadav, K Nigam, D Sharma, PN Kondekar Proceedings of First International Conference on Smart System, Innovations …, 2018 | 16 | 2018 |
A comparative investigation of low work‐function metal implantation in the oxide region for improving electrostatic characteristics of charge plasma TFET M Aslam, D Sharma, S Yadav, D Soni, N Sharma, A Gedam Micro & Nano Letters 14 (2), 123-128, 2019 | 14 | 2019 |
A new design approach for enhancement of DC/RF performance with improved ambipolar conduction of dopingless TFET M Aslam, S Yadav, D Soni, D Sharma Superlattices and Microstructures 112, 86-96, 2017 | 14 | 2017 |
Effective approach to enhance DC and high‐frequency performance of electrically doped TFET S Yadav, A Lemtur, D Sharma, M Aslam, D Soni Micro & Nano Letters 13 (10), 1469-1474, 2018 | 13 | 2018 |
Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept D Soni, D Sharma, M Aslam, S Yadav Micro & Nano Letters 13 (12), 1728-1733, 2018 | 12 | 2018 |
Hetero‐material CPTFET with high‐frequency and linearity analysis for ultra‐low power applications DS Yadav, D Sharma, S Tirkey, DG Sharma, S Bajpai, D Soni, S Yadav, ... Micro & Nano Letters 13 (11), 1609-1614, 2018 | 11 | 2018 |
Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device … S Gupta, D Sharma, D Soni, S Yadav, M Aslam, DS Yadav, K Nigam, ... Micro & Nano Letters 13 (8), 1192-1196, 2018 | 9 | 2018 |
Gate metal work function engineering for the improvement of electrostatic behaviour of doped tunnel field effect transistor D Soni, D Sharma, S Yadav, M Aslam, DS Yadav, N Sharma 2017 IEEE International Symposium on Nanoelectronic and Information Systems …, 2017 | 9 | 2017 |