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Hjelmgren
Hjelmgren
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Verified email at chalmers.se
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Year
Fabrication and characterization of field-plated buried-gate SiC MESFETs
K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ...
IEEE electron device letters 27 (7), 573-575, 2006
952006
Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer
O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ...
IEEE Transactions on Electron Devices 63 (1), 326-332, 2015
742015
Numerical modeling of hot electrons in n-GaAs Schottky-barrier diodes
H Hjelmgren
IEEE transactions on electron devices 37 (5), 1228-1234, 1990
561990
Microwave performance of ‘buffer-free’GaN-on-SiC high electron mobility transistors
DY Chen, A Malmros, M Thorsell, H Hjelmgren, O Kordina, JT Chen, ...
IEEE Electron Device Letters 41 (6), 828-831, 2020
532020
An SiC MESFET-based MMIC process
M Sudow, K Andersson, N Billstrom, J Grahn, H Hjelmgren, J Nilsson, ...
IEEE transactions on microwave theory and techniques 54 (12), 4072-4078, 2006
472006
Single barrier varactors for submillimeter wave power generation
SM Nilsen, H Gronqvist, H Hjelmgren, A Rydberg, EL Kollberg
IEEE transactions on microwave theory and techniques 41 (4), 572-580, 1993
461993
Impact of channel thickness on the large-signal performance in InAlGaN/AlN/GaN HEMTs with an AlGaN back barrier
A Malmros, P Gamarra, M Thorsell, H Hjelmgren, C Lacam, SL Delage, ...
IEEE Transactions on Electron Devices 66 (1), 364-371, 2018
412018
Transient simulation of microwave SiC MESFETs with improved trap models
H Hjelmgren, F Allerstam, K Andersson, PÅ Nilsson, N Rorsman
IEEE transactions on electron devices 57 (3), 729-732, 2010
352010
Electrothermal access resistance model for GaN-based HEMTs
M Thorsell, K Andersson, H Hjelmgren, N Rorsman
IEEE Transactions on Electron Devices 58 (2), 466-472, 2010
322010
Small-signal substrate resistance effect in RF CMOS identified through device simulations
H Hjelmgren, A Litwin
IEEE Transactions on Electron Devices 48 (2), 397-399, 2001
312001
Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3as Passivation for InAlN/AlN/GaN HEMTs
A Malmros, P Gamarra, MA di Forte-Poisson, H Hjelmgren, C Lacam, ...
IEEE Electron Device Letters 36 (3), 235-237, 2015
252015
Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate
H Hjelmgren, K Andersson, J Eriksson, PÅ Nilsson, M Südow, N Rorsman
Solid-state electronics 51 (8), 1144-1152, 2007
252007
Numerical simulations of the capacitance of forward-biased Schottky-diodes
H Hjelmgren, E Kollberg, L Lundgren
Solid-state electronics 34 (6), 587-590, 1991
251991
Thermionic emission in a hydrodynamic model for heterojunction structures
H Hjelmgren, TW Tang
Solid-state electronics 37 (9), 1649-1657, 1994
231994
A millimeter wave quantum well diode oscillator
H Gronqvist, A Rydberg, H Hjelmgren, H Zirath, E Kollberg, J Soderstrom, ...
1988 18th European Microwave Conference, 370-375, 1988
231988
Hydrodynamic simulations of unitraveling-carrier photodiodes
SMM Rahman, H Hjelmgren, J Vukusic, J Stake, PA Andrekson, H Zirath
IEEE journal of quantum electronics 43 (11), 1088-1094, 2007
212007
Optimization of the UTC-PD epitaxy for photomixing at 340 GHz
B Banik, J Vukusic, H Hjelmgren, J Stake
International Journal of Infrared and Millimeter Waves 29, 914-923, 2008
202008
Influence of field plates and surface traps on microwave silicon carbide MESFETs
PÅ Nilsson, F Allerstam, M Sudow, K Andersson, H Hjelmgren, ...
IEEE transactions on electron devices 55 (8), 1875-1879, 2008
162008
Extraction of an electrothermal mobility model for AlGaN/GaN heterostructures
H Hjelmgren, M Thorsell, K Andersson, N Rorsman
IEEE transactions on electron devices 59 (12), 3344-3349, 2012
132012
Capillary blood sampling increases the risk of preanalytical errors in pediatric hospital care: Observational clinical study
H Hjelmgren, A Nilsson, IH Myrberg, N Andersson, BM Ygge, B Nordlund
Journal for Specialists in Pediatric Nursing 26 (4), e12337, 2021
122021
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