| Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 105 (14), 2014 | 94 | 2014 |
| Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ... Journal of Applied Physics 117 (4), 2015 | 68 | 2015 |
| Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Letters 106 (4), 2015 | 63 | 2015 |
| Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, MM Satter, SC Shen, ... physica status solidi (b) 252 (5), 1089-1095, 2015 | 56 | 2015 |
| 100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10% X Li, S Wang, H Liu, FA Ponce, T Detchprohm, RD Dupuis physica status solidi (b) 254 (8), 1600699, 2017 | 53 | 2017 |
| Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ... Applied Physics Letters 110 (1), 2017 | 40 | 2017 |
| Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ... Journal of Crystal Growth 414, 76-80, 2015 | 40 | 2015 |
| Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector YS Liu, AFMS Haq, K Mehta, TT Kao, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Express 9 (11), 111002, 2016 | 34 | 2016 |
| Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow S Wang, X Li, AM Fischer, T Detchprohm, RD Dupuis, FA Ponce Journal of Crystal Growth 475, 334-340, 2017 | 23 | 2017 |
| Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition YS Liu, S Wang, H Xie, TT Kao, K Mehta, XJ Jia, SC Shen, PD Yoder, ... Applied Physics Letters 109 (8), 2016 | 23 | 2016 |
| Lateral current spreading in III-N ultraviolet vertical-cavity surface-emitting lasers using modulation-doped short period superlattices K Mehta, YS Liu, J Wang, H Jeong, T Detchprohm, YJ Park, SR Alugubelli, ... IEEE Journal of Quantum Electronics 54 (4), 1-7, 2018 | 22 | 2018 |
| Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air S Zhao, H McFavilen, S Wang, FA Ponce, C Arena, S Goodnick, ... Journal of Electronic Materials 45, 2087-2091, 2016 | 14 | 2016 |
| Identification of point defects using high-resolution electron energy loss spectroscopy S Wang, K March, FA Ponce, P Rez Physical Review B 99 (11), 115312, 2019 | 11 | 2019 |
| Dislocation baskets in thick InxGa1− xN epilayers S Wang, H Xie, H Liu, AM Fischer, H McFavilen, FA Ponce Journal of Applied Physics 124 (10), 2018 | 4 | 2018 |
