| High-speed CMOS circuit technique J Yuan, C Svensson IEEE journal of solid-state circuits 24 (1), 62-70, 1989 | 1157 | 1989 |
| A hydrogen− sensitive MOS field− effect transistor I Lundström, S Shivaraman, C Svensson, L Lundkvist Applied Physics Letters 26 (2), 55-57, 1975 | 995 | 1975 |
| Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices KO Jeppson, CM Svensson Journal of Applied Physics 48 (5), 2004-2014, 1977 | 953 | 1977 |
| Impact of CMOS technology scaling on the atmospheric neutron soft error rate P Hazucha, C Svensson IEEE Transactions on Nuclear science 47 (6), 2586-2594, 2000 | 784 | 2000 |
| A hydrogen‐sensitive Pd‐gate MOS transistor KI Lundström, MS Shivaraman, CM Svensson Journal of Applied Physics 46 (9), 3876-3881, 1975 | 649 | 1975 |
| Power consumption estimation in CMOS VLSI chips D Liu, C Svensson IEEE Journal of Solid-State Circuits 29 (6), 663-670, 1994 | 647 | 1994 |
| Field‐effect mobility of poly (3‐hexylthiophene) A Assadi, C Svensson, M Willander, O Inganäs Applied Physics Letters 53 (3), 195-197, 1988 | 617 | 1988 |
| Low frequency noise in MOS transistors—I theory S Christensson, I Lundström, C Svensson Solid-State Electronics 11 (9), 797-812, 1968 | 590 | 1968 |
| Trading speed for low power by choice of supply and threshold voltages D Liu, C Svensson IEEE journal of solid-state circuits 28 (1), 10-17, 1993 | 411 | 1993 |
| New single-clock CMOS latches and flipflops with improved speed and power savings J Yuan, C Svensson IEEE Journal of Solid-State Circuits 32 (1), 62-69, 1997 | 357 | 1997 |
| A true single-phase-clock dynamic CMOS circuit technique Y Ji-Ren, I Karlsson, C Svensson IEEE Journal of Solid-State Circuits 22 (5), 899-901, 1987 | 334 | 1987 |
| Tunneling to traps in insulators I Lundström, C Svensson Journal of Applied Physics 43 (12), 5045-5047, 1972 | 275 | 1972 |
| Trap‐assisted charge injection in MNOS structures C Svensson, I Lundström Journal of Applied Physics 44 (10), 4657-4663, 1973 | 206 | 1973 |
| A 2.4-GHz RF sampling receiver front-end in 0.18-/spl mu/m CMOS D Jakonis, K Folkesson, J Dbrowski, P Eriksson, C Svensson IEEE Journal of Solid-State Circuits 40 (6), 1265-1277, 2005 | 188 | 2005 |
| Noise in digital dynamic CMOS circuits P Larsson, C Svensson IEEE Journal of Solid-State Circuits 29 (6), 655-662, 1994 | 188 | 1994 |
| Discharge of MNOS structures L Lundkvist, I Lundström, C Svensson Solid-State Electronics 16 (7), 811-IN1, 1973 | 184 | 1973 |
| Power dissipation bounds for high-speed Nyquist analog-to-digital converters T Sundstrom, B Murmann, C Svensson IEEE Transactions on Circuits and Systems I: Regular Papers 56 (3), 509-518, 2008 | 183 | 2008 |
| VLSI implementation of a focal plane image processor-a realization of the near-sensor image processing concept JE Eklund, C Svensson, A Astrom IEEE Transactions on Very Large Scale Integration (VLSI) Systems 4 (3), 322-335, 1996 | 181 | 1996 |
| Wideband LNA for a multistandard wireless receiver in 0.18/spl mu/m CMOS S Andersson, C Svenson, O Drugge ESSCIRC 2004-29th European Solid-State Circuits Conference (IEEE Cat. No …, 2003 | 179 | 2003 |
| Properties of MNOS structures KI Lundstrom, CM Svensson IEEE Transactions on Electron Devices 19 (6), 826-836, 1972 | 143 | 1972 |
