| Phase change memory technology GW Burr, MJ Breitwisch, M Franceschini, D Garetto, K Gopalakrishnan, ... Journal of Vacuum Science & Technology B 28 (2), 223-262, 2010 | 1231 | 2010 |
| Novel lithography-independent pore phase change memory M Breitwisch, T Nirschl, CF Chen, Y Zhu, MH Lee, M Lamorey, GW Burr, ... 2007 IEEE Symposium on VLSI Technology, 100-101, 2007 | 145 | 2007 |
| A low power phase change memory using thermally confined TaN/TiN bottom electrode JY Wu, M Breitwisch, S Kim, TH Hsu, R Cheek, PY Du, J Li, EK Lai, Y Zhu, ... 2011 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2011 | 58 | 2011 |
| Understanding amorphous states of phase-change memory using Frenkel-Poole model YH Shih, MH Lee, M Breitwisch, R Cheek, JY Wu, B Rajendran, Y Zhu, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 46 | 2009 |
| Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials RS Shenoy, K Gopalakrishnan, B Jackson, K Virwani, GW Burr, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 94-95, 2011 | 41 | 2011 |
| On the dynamic resistance and reliability of phase change memory B Rajendran, MH Lee, M Breitwisch, GW Burr, YH Shih, R Cheek, ... 2008 Symposium on VLSI Technology, 96-97, 2008 | 34 | 2008 |
| Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory YH Shih, JY Wu, B Rajendran, MH Lee, R Cheek, M Lamorey, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 31 | 2008 |
| Dynamic resistance—A metric for variability characterization of phase-change memory B Rajendran, M Breitwisch, MH Lee, GW Burr, YH Shih, R Cheek, ... IEEE electron device letters 30 (2), 126-129, 2008 | 30 | 2008 |
| Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5 JS Washington, EA Joseph, S Raoux, JL Jordan-Sweet, D Miller, ... Journal of Applied Physics 109 (3), 2011 | 25 | 2011 |
| A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems HL Lung, M Breitwisch, JY Wu, PY Du, Y Zhu, MH Lee, YH Shih, EK Lai, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 98-99, 2011 | 15 | 2011 |
| Patterning of N:Ge2Sb2Te5 Films and the Characterization of Etch Induced Modification for Non-Volatile Phase Change Memory Applications EA Joseph, TD Happ, SH Chen, S Raoux, CF Chen, M Breitwisch, ... 2008 International Symposium on VLSI Technology, Systems and Applications …, 2008 | 15 | 2008 |
| Micromachined scintillation devices with charge conversion nanoparticles for neutron and beta particle detection R Dasaka, S Pellegrin, M Kamavaram, C Wilson Proceeding-MicroTas 1, 472-475, 2005 | 10 | 2005 |
| High selectivity nitride removal process based on selective polymer deposition RK Dasaka, SU Engelmann, NCM Fuller, M Nakamura, RS Wise US Patent 9,627,533, 2017 | 9 | 2017 |
| Phase-Change Memory Devices Operative at 100 KF Kao, YC Chu, FT Chen, MJ Tsai, TS Chin IEEE Electron Device Letters 31 (8), 872-874, 2010 | 8 | 2010 |
| Integrated metrology's role in Gas Cluster Ion Beam etch T Kagalwala, R Dasaka, M Aquilino, L Economikos, A Cepler, C Kang, ... 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2015 | 7 | 2015 |
| A new etch planarization technology to correct non-uniformity post chemical mechanical polishing M Shen, B Zhou, Y Zhou, J Hoang, J Bowers, AD Bailey, E Pape, H Singh, ... IEEE Transactions on Semiconductor Manufacturing 28 (4), 502-507, 2015 | 4 | 2015 |
| IEEE Inter. Electron Devices Meet JY Wu, M Breitwisch, S Kim, TH Hsu, R Cheek, PY Du, J Li, EK Lai, Y Zhu, ... Tech. Dig 3, 1-3.2, 2011 | 4 | 2011 |
| Etch planarization-A new approach to correct non-uniformity post chemical mechanical polishing M Shen, B Zhou, Y Zhou, J Hoang, J Bowers, A Bailey, E Pape, H Singh, ... 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014 …, 2014 | 2 | 2014 |
| Influence of bottom contact material on the selective chemical vapor deposition of crystalline GeSbTe alloys A Schrott, CF Chen, MJ Breitwisch, EA Joseph, RK Dasaka, RW Cheek, ... MRS Online Proceedings Library (OPL) 1251, 1251-H06-10, 2010 | 2 | 2010 |
| The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te5 J Washington, EA Joseph, MA Paesler, G Lucovsky, JL Jordan-Sweet, ... MRS Online Proceedings Library (OPL) 1160, 1160-H13-08, 2009 | 2 | 2009 |
